Part Details for YJD40N04A by Yangzhou Yangjie Electronics Co Ltd
Overview of YJD40N04A by Yangzhou Yangjie Electronics Co Ltd
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Energy and Power Systems
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Part Details for YJD40N04A
YJD40N04A CAD Models
YJD40N04A Part Data Attributes
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YJD40N04A
Yangzhou Yangjie Electronics Co Ltd
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YJD40N04A
Yangzhou Yangjie Electronics Co Ltd
Power Field-Effect Transistor, 40A I(D), 40V, 0.013ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
Package Description | SMALL OUTLINE, R-PSSO-G2 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 80 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 40 V | |
Drain Current-Max (ID) | 40 A | |
Drain-source On Resistance-Max | 0.013 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Pulsed Drain Current-Max (IDM) | 140 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |