Part Details for YJL02N10A by Yangzhou Yangjie Electronics Co Ltd
Results Overview of YJL02N10A by Yangzhou Yangjie Electronics Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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YJL02N10A Information
YJL02N10A by Yangzhou Yangjie Electronics Co Ltd is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for YJL02N10A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
YJL02N10A-YAN
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TME | Transistor: N-MOSFET, TRENCH POWER MV, unipolar, 100V, 1.6A, 1.2W Min Qty: 10 | 0 |
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$0.0360 / $0.0800 | RFQ |
Part Details for YJL02N10A
YJL02N10A CAD Models
YJL02N10A Part Data Attributes
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YJL02N10A
Yangzhou Yangjie Electronics Co Ltd
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Datasheet
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YJL02N10A
Yangzhou Yangjie Electronics Co Ltd
Power Field-Effect Transistor, 2A I(D), 100V, 0.31ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Rohs Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 100 V | |
| Drain Current-Max (ID) | 2 A | |
| Drain-source On Resistance-Max | 0.31 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 1.3 W | |
| Pulsed Drain Current-Max (IDM) | 8 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |