Part Details for YJL03N06A by Yangzhou Yangjie Electronics Co Ltd
Results Overview of YJL03N06A by Yangzhou Yangjie Electronics Co Ltd
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (2 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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YJL03N06A Information
YJL03N06A by Yangzhou Yangjie Electronics Co Ltd is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for YJL03N06A
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
YJL03N06A-YAN
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TME | Transistor: N-MOSFET, TRENCH POWER MV, unipolar, 60V, 2.4A, 1.2W Min Qty: 10 | 5385 |
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$0.0331 / $0.0938 | Buy Now |
Part Details for YJL03N06A
YJL03N06A CAD Models
YJL03N06A Part Data Attributes
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YJL03N06A
Yangzhou Yangjie Electronics Co Ltd
Buy Now
Datasheet
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Compare Parts:
YJL03N06A
Yangzhou Yangjie Electronics Co Ltd
Power Field-Effect Transistor, 3A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET,
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| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 3 A | |
| Drain-source On Resistance-Max | 0.1 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 12 A | |
| Surface Mount | YES | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for YJL03N06A
This table gives cross-reference parts and alternative options found for YJL03N06A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of YJL03N06A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Manufacturer | Composite Price | Description | Compare |
|---|---|---|---|---|
| YJL03N06AF2 | Yangzhou Yangjie Electronics Co Ltd | Check for Price | Power Field-Effect Transistor, 3A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, | YJL03N06A vs YJL03N06AF2 |
| YJL03N06B | Yangzhou Yangjie Electronics Co Ltd | Check for Price | Power Field-Effect Transistor, | YJL03N06A vs YJL03N06B |