Part Details for YJL2312AL by Yangzhou Yangjie Electronics Co Ltd
Overview of YJL2312AL by Yangzhou Yangjie Electronics Co Ltd
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Part Details for YJL2312AL
YJL2312AL CAD Models
YJL2312AL Part Data Attributes
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YJL2312AL
Yangzhou Yangjie Electronics Co Ltd
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Datasheet
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YJL2312AL
Yangzhou Yangjie Electronics Co Ltd
Power Field-Effect Transistor,
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Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | YANGZHOU YANGJIE ELECTRONICS CO LTD | |
Package Description | , | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Date Of Intro | 2020-09-24 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 7.6 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 117 pF | |
JESD-30 Code | R-PDSO-G3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.5 W | |
Power Dissipation-Max (Abs) | 1.5 W | |
Pulsed Drain Current-Max (IDM) | 30 A | |
Surface Mount | YES | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |