Datasheets
YTF630 by: Toshiba America Electronic Components

TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power

Part Details for YTF630 by Toshiba America Electronic Components

Results Overview of YTF630 by Toshiba America Electronic Components

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YTF630 Information

YTF630 by Toshiba America Electronic Components is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for YTF630

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YTF630 Part Data Attributes

YTF630 Toshiba America Electronic Components
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YTF630 Toshiba America Electronic Components TRANSISTOR 9 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power
Rohs Code No
Part Life Cycle Code Obsolete
Ihs Manufacturer TOSHIBA CORP
Package Description FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e0
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish TIN LEAD
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

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