Datasheets
ZXMN4A06GTA by:

Power Field-Effect Transistor, 5A I(D), 40V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Part Details for ZXMN4A06GTA by Zetex / Diodes Inc

Results Overview of ZXMN4A06GTA by Zetex / Diodes Inc

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ZXMN4A06GTA Information

ZXMN4A06GTA by Zetex / Diodes Inc is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Part Details for ZXMN4A06GTA

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ZXMN4A06GTA Part Data Attributes

ZXMN4A06GTA Zetex / Diodes Inc
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ZXMN4A06GTA Zetex / Diodes Inc Power Field-Effect Transistor, 5A I(D), 40V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer ZETEX PLC
Package Description SOT-223, 4 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 40 V
Drain Current-Max (ID) 5 A
Drain-source On Resistance-Max 0.05 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 3.9 W
Pulsed Drain Current-Max (IDM) 22 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn)
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for ZXMN4A06GTA

This table gives cross-reference parts and alternative options found for ZXMN4A06GTA. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of ZXMN4A06GTA, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
ZXMN4A06G Diodes Incorporated Check for Price Power Field-Effect Transistor, 6.7A I(D), 40V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN ZXMN4A06GTA vs ZXMN4A06G
ZXMN4A06G Zetex / Diodes Inc Check for Price Power Field-Effect Transistor, 6.7A I(D), 40V, 0.075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN ZXMN4A06GTA vs ZXMN4A06G
ZXMN4A06GTC Zetex / Diodes Inc Check for Price Power Field-Effect Transistor, 5A I(D), 40V, 0.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN ZXMN4A06GTA vs ZXMN4A06GTC

ZXMN4A06GTA Related Parts

ZXMN4A06GTA Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the ZXMN4A06GTA is -55°C to 150°C.

  • Yes, the ZXMN4A06GTA is suitable for high-frequency switching applications due to its low capacitance and high switching speed.

  • The maximum current rating for the ZXMN4A06GTA is 4A.

  • No, the ZXMN4A06GTA is not a low-dropout regulator (LDO). It is a N-channel enhancement mode MOSFET.

  • The typical gate-source threshold voltage for the ZXMN4A06GTA is 2.5V.

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