ZXTS1000E6TA
Description: Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon,

Overview of ZXTS1000E6TA by Diodes Incorporated

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
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  • Number of Functional Equivalents: ( 0 options )
  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )
Where used in Applications: Internet of Things (IoT) Environmental Monitoring Industrial Automation Financial Technology (Fintech) Smart Cities Energy and Power Systems Transportation and Logistics Agriculture Technology Telecommunications Virtual Reality (VR), Augmented Reality (AR), and Vision Systems Education and Research Consumer Electronics Security and Surveillance Audio and Video Systems Computing and Data Storage Healthcare Renewable Energy Entertainment and Gaming

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Part Data Attributes for ZXTS1000E6TA by Diodes Incorporated

ZXTS1000E6TA
Diodes Incorporated
-
-
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
DIODES INC
Package Description
SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code
compliant
ECCN Code
EAR99
Samacsys Manufacturer
Diodes Incorporated
Collector Current-Max (IC)
1.25 A
Collector-Emitter Voltage-Max
12 V
Configuration
SINGLE WITH BUILT-IN DIODE
DC Current Gain-Min (hFE)
30
JESD-30 Code
R-PDSO-G6
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
6
Operating Temperature-Max
150 °C
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
PNP
Power Dissipation-Max (Abs)
0.885 W
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Transition Frequency-Nom (fT)
220 MHz
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  1. ZXTS1000E6TA
    Diodes Incorporated
    Small Signal Bipolar Transistor, 1.25A I(C), 12V V(BR)CEO, 1-Element, PNP, Silicon,
    VS

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