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1N5302UR-1
Microchip Technology Inc
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$5.3420 Buy | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | 510 kΩ | Not Qualified | O-LELF-R2 | e0 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | Compliant | EAR99 | 8541.10.00.70 | |||||||
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1N5302UR-1/TR
Microchip Technology Inc
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$5.4991 Buy | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | 510 kΩ | 105 kΩ | O-LELF-R2 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | WRAP AROUND | END | Unknown | EAR99 | 8541.10.00.70 | MELF-2 | ||||||||||
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JAN1N5302UR-1
Microchip Technology Inc
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$37.8002 Buy | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | Compliant | EAR99 | 8541.10.00.70 | |||||||
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JAN1N5302UR-1/TR
Microchip Technology Inc
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$37.9545 Buy | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | Unknown | EAR99 | 8541.10.00.70 | |||||
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JANTX1N5302UR-1
Microchip Technology Inc
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$39.4207 Buy | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | Compliant | EAR99 | 8541.10.00.50 | |||||||
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JANTX1N5302UR-1/TR
Microchip Technology Inc
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$39.5949 Buy | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | NOT SPECIFIED | NOT SPECIFIED | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | Unknown | EAR99 | 8541.10.00.50 | |||||
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JANTXV1N5302UR-1/TR
Microchip Technology Inc
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$41.6318 Buy | No | Active | CURRENT REGULATOR DIODE | Unknown | EAR99 | 8541.10.00.50 | |||||||||||||||||||||||||||||||||
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JANTXV1N5302UR-1
Microchip Technology Inc
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$41.8603 Buy | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | Compliant | EAR99 | 8541.10.00.50 | |||||||
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JANS1N5302UR-1/TR
Microchip Technology Inc
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$134.2201 Buy | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | HIGH SOURCE IMPEDANCE | 510 kΩ | 105 kΩ | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | Compliant | EAR99 | 8541.10.00.50 | MELF-2 | ||||||
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JANS1N5302UR-1
Microchip Technology Inc
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$135.3461 Buy | No | Active | 1.6 V | 1.5 mA | 500 mW | SILICON | CURRENT REGULATOR DIODE | SINGLE | YES | 100 V | 1 | FIELD EFFECT | METALLURGICALLY BONDED | Qualified | O-LELF-R2 | e0 | MIL-19500 | DO-213AB | 1 | 175 °C | -65 °C | ISOLATED | 2 | GLASS | ROUND | LONG FORM | TIN LEAD | WRAP AROUND | END | Compliant | EAR99 | 8541.10.00.50 |