Parametric results for: Varactors

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KDV804KS
KEC
Check for Price Not Recommended 44.75 pF SILICON VARIABLE CAPACITANCE DIODE COMMON CATHODE, 2 ELEMENTS YES 2 6.15 % 1.74 Not Qualified R-PDSO-G3 150 °C 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL KEC CORP SOT-23 SOT-23, 3 PIN 3 unknown EAR99 8541.10.00.80
KV1562M
TOKO Inc
Check for Price No Transferred 100 pF SILICON 20 V VARIABLE CAPACITANCE DIODE 2 BANKS, COMMON CATHODE, 2 ELEMENTS YES 4 2.2 % 17 VERY HIGH FREQUENCY 200 Not Qualified R-PDSO-G8 NOT SPECIFIED NOT SPECIFIED 8 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TOKO INC R-PDSO-G8 unknown EAR99 8541.10.00.80
SQ1217CCHIP
Msi Electronics Inc
Check for Price Obsolete 3.9 pF 0.02 pA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 30 V 1 VERY HIGH Q 2 % 2.5 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 1100 25 V ABRUPT Not Qualified X-XUUC-N 175 °C UNSPECIFIED UNSPECIFIED UNCASED CHIP NO LEAD UPPER MSI ELECTRONICS INC X-XUUC-N unknown EAR99 8541.10.00.40
ZC807A
Msi Electronics Inc
Check for Price Obsolete 120 pF 0.02 pA 400 mW SILICON 25 V VARIABLE CAPACITANCE DIODE SINGLE NO 25 V 1 3% MATCHED SETS ARE AVAILABLE 10 % 5 VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY 200 20 V HYPERABRUPT Not Qualified O-LALF-W2 175 °C ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL MSI ELECTRONICS INC O-LALF-W2 unknown EAR99 8541.10.00.80
1N954CCO
Cobham PLC
Check for Price Yes Transferred 35 pF 1 µA SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 2 % 6.2857 7 25 V Not Qualified X-XUUC-N 150 °C -65 °C NOT SPECIFIED NOT SPECIFIED UNSPECIFIED UNSPECIFIED UNCASED CHIP NO LEAD UPPER KNOX SEMICONDUCTORS INC DIE X-XUUC-N 1 unknown EAR99 8541.10.00.40
AT900511
Advanced Semiconductor Inc
Check for Price Active 2.2 pF SILICON 90 V VARIABLE CAPACITANCE DIODE YES 10 % 7.8 L BAND TO S BAND 900 ABRUPT Not Qualified O-CEMW-N2 2 CERAMIC, METAL-SEALED COFIRED ROUND MICROWAVE NO LEAD END ASI SEMICONDUCTOR INC O-CEMW-N2 unknown EAR99 8541.10.00.80
SMV1201-97
Alpha Industries
Check for Price Transferred 50 nA 250 mW SILICON 12 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 2.833 VERY HIGH FREQUENCY TO S BAND 500 8 V HYPERABRUPT Not Qualified R-CDSO-G3 125 °C -55 °C 3 CERAMIC, METAL-SEALED COFIRED RECTANGULAR SMALL OUTLINE GULL WING DUAL ALPHA INDUSTRIES INC R-CDSO-G3 unknown EAR99 8541.10.00.80
JAN1N5450C
Aeroflex Inc
Check for Price No Transferred 33 pF 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 2 % 2.9 500 ABRUPT Not Qualified O-LALF-W2 e0 MIL DO-7 ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC O-LALF-W2 unknown EAR99 8541.10.00.80
DH71030-53T10
Temex Ceramics
Check for Price Obsolete 3 pF SILICON 30 V VARIABLE CAPACITANCE DIODE COMMON CATHODE, 2 ELEMENTS YES 2 LOW NOISE 20 % HIGH FREQUENCY TO S BAND ABRUPT Not Qualified R-PDSO-G3 125 °C -55 °C 3 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL TEMEX COMPONENTS PLASTIC PACKAGE-3 unknown EAR99 8541.10.00.80
GC1602-88
Lockheed Martin Microwave
Check for Price Obsolete 1.2 pF 20 nA SILICON 45 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 10 % 4.5 X BAND 2800 35 V ABRUPT Not Qualified O-MEMW-N2 150 °C -55 °C CATHODE 2 METAL ROUND MICROWAVE NO LEAD END LOCKHEED MARTIN MICROWAVE O-MEMW-N2 unknown EAR99 8541.10.00.80