Parametric results for: Varactors

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KSV1403AH
Cobham Semiconductor Solutions
Check for Price No No Transferred 175 pF 400 mW SILICON 12 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 3% MATCHED SETS ARE AVAILABLE 10 % 10 VERY HIGH FREQUENCY 200 HYPERABRUPT Not Qualified O-LALF-W2 e0 DO-7 ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL AEROFLEX/MICROMETRICS DO-7 O-LALF-W2 2 unknown EAR99 8541.10.00.80
V933ACO
Cobham Semiconductor Solutions
Check for Price Yes Transferred 33 pF 400 mW SILICON 22 V VARIABLE CAPACITANCE DIODE SINGLE NO 1 ULTRA-LOW LEAKAGE 10 % Not Qualified O-LALF-W2 NOT SPECIFIED NOT SPECIFIED ISOLATED 2 GLASS ROUND LONG FORM WIRE AXIAL AEROFLEX/MICROMETRICS DIE O-LALF-W2 1 unknown EAR99 8541.10.00.80
SMV1231-011LF
Skyworks Solutions Inc
Check for Price Yes Yes Obsolete 1.575 pF 250 mW SILICON 15 V VARIABLE CAPACITANCE DIODE SINGLE YES 15 V 1 LOW NOISE 9.21 % 1.5 S BAND 1500 HYPERABRUPT Not Qualified R-PDSO-G2 e3 1 260 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL SKYWORKS SOLUTIONS INC GREEN PACKAGE-2 2 unknown EAR99 8541.10.00.80
HVU307TRU-E
Renesas Electronics Corporation
Check for Price Yes Yes Transferred SILICON 32 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 12 VERY HIGH FREQUENCY Not Qualified R-PDSO-G2 e6 1 2 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN BISMUTH GULL WING DUAL RENESAS TECHNOLOGY CORP R-PDSO-G2 unknown EAR99 8541.10.00.80
MGV125-26-0805-2
Cobham Semiconductor Solutions
Check for Price Yes Yes Transferred 2.06 pF 100 mW GALLIUM ARSENIDE 22 V VARIABLE CAPACITANCE DIODE SINGLE YES 22 V 1 10.19 % KA BAND 3000 HYPERABRUPT Not Qualified R-CDMW-N2 e4 2 CERAMIC, METAL-SEALED COFIRED RECTANGULAR MICROWAVE GOLD NO LEAD DUAL AEROFLEX/METELICS INC R-CDMW-N2 2 unknown EAR99 8541.10.00.80
AH160-85
Thales Group
Check for Price Transferred 0.62 pF 100 nA GALLIUM ARSENIDE 45 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 20 % 2.35 VERY HIGH FREQUENCY TO KA BAND 9500 10 V ABRUPT Not Qualified O-XEMW-F2 85 °C -40 °C 2 UNSPECIFIED ROUND MICROWAVE FLAT END THOMSON-CSF SEMICONDUCTORS O-XEMW-F2 unknown EAR99 8541.10.00.80
1N5447C
Aeroflex Inc
Check for Price No Transferred 20 pF 0.02 pA 400 mW SILICON 30 V VARIABLE CAPACITANCE DIODE SINGLE NO 30 V 1 2 % 2.6 350 25 V ABRUPT Not Qualified O-LALF-W2 e0 DO-7 175 °C -65 °C ISOLATED 2 GLASS ROUND LONG FORM TIN LEAD WIRE AXIAL KNOX SEMICONDUCTORS INC DO-7 O-LALF-W2 2 unknown EAR99 8541.10.00.80
MV1402-3MCHIP
API Technologies Corp
Check for Price Obsolete 360 pF 400 mW SILICON 12 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 3% MATCHED SET OF THREE DIODES 17.87 % 10 200 HYPERABRUPT Not Qualified X-XUUC-N 175 °C UNSPECIFIED UNSPECIFIED UNCASED CHIP NO LEAD UPPER API TECHNOLOGIES CORP DIE X-XUUC-N unknown EAR99 8541.10.00.40
MA45274
TE Connectivity
Check for Price Transferred 10 pF 20 nA 200 mW SILICON 60 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 LOW LEAKAGE 10 % 7 ULTRA HIGH FREQUENCY 1000 48 V ABRUPT Not Qualified O-CEMW-N2 150 °C -65 °C 2 CERAMIC, METAL-SEALED COFIRED ROUND MICROWAVE NO LEAD END TYCO ELECTRONICS M/A-COM O-CEMW-N2 unknown EAR99 8541.10.00.80
TX-GC1808-85
Lockheed Martin Microwave
Check for Price Obsolete 3.9 pF 20 nA SILICON 90 V VARIABLE CAPACITANCE DIODE SINGLE YES 1 HIGH RELIABILITY 10 % 8 S BAND 700 80 V ABRUPT Not Qualified O-MEMW-N2 150 °C -55 °C CATHODE 2 METAL ROUND MICROWAVE NO LEAD END LOCKHEED MARTIN MICROWAVE O-MEMW-N2 unknown EAR99 8541.10.00.80