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MT18HVS25672PKIZ-80EXX
Micron Technology Inc
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Check for Price | Active | 19.3274 Gbit | 72 | 256MX72 | 1.8 V | DUAL BANK PAGE BURST | DDR2 DRAM MODULE | AUTO REFRESH | 1 | 1 | 256000000 | 268.4355 M | SYNCHRONOUS | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-XDMA-N244 | Not Qualified | e4 | 85 °C | -40 °C | 244 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | GOLD | NO LEAD | DUAL | 3.8 mm | 82 mm | 18.2 mm | MICRON TECHNOLOGY INC | DIMM | DIMM, | 244 | compliant | EAR99 | 8542.32.00.36 | ||||||||||||||||||||
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M366F0804CT1-C60
Samsung Semiconductor
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Check for Price | Obsolete | 536.8709 Mbit | 64 | 8MX64 | 3.3 V | 60 ns | 4096 | FAST PAGE WITH EDO | EDO DRAM MODULE | RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH | COMMON | 1 | 1 | 8000000 | 8.3886 M | ASYNCHRONOUS | 3-STATE | 4 mA | 444 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-XDMA-N168 | Not Qualified | 70 °C | 168 | UNSPECIFIED | DIMM | DIMM168 | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | 1.27 mm | DUAL | 25.4 mm | SAMSUNG SEMICONDUCTOR INC | DIMM | DIMM, DIMM168 | 168 | unknown | EAR99 | 8542.32.00.28 | |||||||||||||||||
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IS43TR16640A-187FBL
Integrated Silicon Solution Inc
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Check for Price | Obsolete | 1.0737 Gbit | 16 | 64MX16 | 1.5 V | 13.125 ns | MULTI BANK PAGE BURST | DDR DRAM | AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 1.575 V | 1.425 V | CMOS | OTHER | R-PBGA-B96 | 95 °C | 96 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 9 mm | INTEGRATED SILICON SOLUTION INC | BGA | TFBGA, | 96 | compliant | EAR99 | 8542.32.00.32 | |||||||||||||||||||||
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VR5DP287218FBZ
Viking Technology
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Check for Price | Yes | Yes | Obsolete | 9.6637 Gbit | 72 | 128MX72 | 1.8 V | 400 ps | SINGLE BANK PAGE BURST | DDR DRAM MODULE | AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX | 1 | 1 | 128000000 | 134.2177 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | OTHER | R-XDMA-N200 | 85 °C | NOT SPECIFIED | NOT SPECIFIED | 200 | UNSPECIFIED | DIMM | RECTANGULAR | MICROELECTRONIC ASSEMBLY | NO | NO LEAD | DUAL | 29.972 mm | 67.564 mm | 3.556 mm | VIKING TECHNOLOGY | MODULE | DIMM, | 200 | unknown | EAR99 | 8542.32.00.36 | ||||||||||||||||||
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HY5DU281622FTP-H
SK Hynix Inc
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Check for Price | Yes | Obsolete | 134.2177 Mbit | 16 | 8MX16 | 2.5 V | 750 ps | 133 MHz | 4096 | FOUR BANK PAGE BURST | DDR1 DRAM | AUTO/SELF REFRESH | COMMON | 2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 2,4,8 | 15 mA | 230 µA | 2.7 V | 2.3 V | CMOS | COMMERCIAL | R-PDSO-G66 | Not Qualified | e6 | 70 °C | 66 | PLASTIC/EPOXY | TSSOP | TSSOP66,.46 | RECTANGULAR | SMALL OUTLINE | YES | TIN BISMUTH | GULL WING | 650 µm | DUAL | 1.194 mm | 22.225 mm | 10.16 mm | SK HYNIX INC | TSOP2 | TSSOP, TSSOP66,.46 | 66 | unknown | EAR99 | 8542.32.00.02 | ||||||||
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IC41LV44002-50TI
Integrated Silicon Solution Inc
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Check for Price | No | Obsolete | 16.7772 Mbit | 4 | 4MX4 | 3.3 V | 50 ns | 2048 | EDO PAGE | EDO DRAM | RAS ONLY CAS BEFORE RAS /HIDDEN REFRESH | COMMON | 1 | 1 | 4000000 | 4.1943 M | 3-STATE | NO | NO | 500 µA | 120 µA | 3.6 V | 3 V | CMOS | INDUSTRIAL | R-PDSO-G24 | Not Qualified | e0 | 85 °C | -40 °C | 24 | PLASTIC/EPOXY | TSOP | TSOP24/26,.36 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | Tin/Lead (Sn/Pb) | GULL WING | DUAL | INTEGRATED SILICON SOLUTION INC | compliant | EAR99 | 8542.32.00.02 | |||||||||||||||||
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MT42L192M32D1LD-25AT:A
Micron Technology Inc
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Check for Price | Active | 6.4425 Gbit | 32 | 192MX32 | 1.8 V | 10 ns | 2048 | MULTI BANK PAGE BURST | LPDDR2 DRAM | SELF REFRESH; IT ALSO REQUIRES 1.2V NOM | 1 | 1 | 192000000 | 201.3266 M | SYNCHRONOUS | YES | 5 µA | 1.95 V | 1.7 V | CMOS | S-PBGA-B220 | 220 | PLASTIC/EPOXY | VFBGA | SQUARE | GRID ARRAY, VERY THIN PROFILE, FINE PITCH | YES | BALL | 500 µm | BOTTOM | 1 mm | 14 mm | 14 mm | MICRON TECHNOLOGY INC | VFBGA, | compliant | EAR99 | 8542.32.00.36 | |||||||||||||||||||||||
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K4S640832F-TC75
Samsung Semiconductor
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Check for Price | No | Obsolete | 67.1089 Mbit | 8 | 8MX8 | 3.3 V | 5.4 ns | 133 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 1 mA | 135 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PDSO-G54 | Not Qualified | e0 | 70 °C | 54 | PLASTIC/EPOXY | TSOP2 | TSOP54,.46,32 | RECTANGULAR | SMALL OUTLINE, THIN PROFILE | YES | TIN LEAD | GULL WING | 800 µm | DUAL | 1.2 mm | 22.22 mm | 10.16 mm | SAMSUNG SEMICONDUCTOR INC | TSOP2 | TSOP2, TSOP54,.46,32 | 54 | unknown | EAR99 | 8542.32.00.02 | ||||||||
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MT48LC16M8A2FB-75:G
Micron Technology Inc
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Check for Price | No | Obsolete | 134.2177 Mbit | 8 | 16MX8 | 3.3 V | 5.4 ns | 133 MHz | 4096 | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | COMMON | 1,2,4,8 | 1 | 1 | 16000000 | 16.7772 M | SYNCHRONOUS | 3-STATE | YES | 1,2,4,8,FP | 2 mA | 310 µA | 3.6 V | 3 V | CMOS | COMMERCIAL | R-PBGA-B60 | Not Qualified | e0 | 70 °C | 60 | PLASTIC/EPOXY | TFBGA | BGA60,8X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN LEAD SILVER | BALL | 800 µm | BOTTOM | 1.2 mm | 16 mm | 8 mm | MICRON TECHNOLOGY INC | BGA | 8 X 16 MM, PLASTIC, FBGA-60 | 60 | not_compliant | EAR99 | 8542.32.00.02 | ||||||||
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K4S563233F-HG1L0
Samsung Semiconductor
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Check for Price | Yes | Obsolete | 268.4355 Mbit | 32 | 8MX32 | 3 V | 7 ns | FOUR BANK PAGE BURST | SYNCHRONOUS DRAM | AUTO/SELF REFRESH | 1 | 1 | 8000000 | 8.3886 M | SYNCHRONOUS | YES | 3.6 V | 2.7 V | CMOS | OTHER | R-PBGA-B90 | Not Qualified | e1 | 3 | 85 °C | -25 °C | 90 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 13 mm | 8 mm | SAMSUNG SEMICONDUCTOR INC | BGA | TFBGA, | 90 | compliant | EAR99 | 8542.32.00.24 |