Parametric results for: DRAMs

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MT18HVS25672PKIZ-80EXX
Micron Technology Inc
Check for Price Active 19.3274 Gbit 72 256MX72 1.8 V DUAL BANK PAGE BURST DDR2 DRAM MODULE AUTO REFRESH 1 1 256000000 268.4355 M SYNCHRONOUS 1.9 V 1.7 V CMOS INDUSTRIAL R-XDMA-N244 Not Qualified e4 85 °C -40 °C 244 UNSPECIFIED DIMM RECTANGULAR MICROELECTRONIC ASSEMBLY NO GOLD NO LEAD DUAL 3.8 mm 82 mm 18.2 mm MICRON TECHNOLOGY INC DIMM DIMM, 244 compliant EAR99 8542.32.00.36
M366F0804CT1-C60
Samsung Semiconductor
Check for Price Obsolete 536.8709 Mbit 64 8MX64 3.3 V 60 ns 4096 FAST PAGE WITH EDO EDO DRAM MODULE RAS ONLY/CAS BEFORE RAS/HIDDEN REFRESH COMMON 1 1 8000000 8.3886 M ASYNCHRONOUS 3-STATE 4 mA 444 µA 3.6 V 3 V CMOS COMMERCIAL R-XDMA-N168 Not Qualified 70 °C 168 UNSPECIFIED DIMM DIMM168 RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD 1.27 mm DUAL 25.4 mm SAMSUNG SEMICONDUCTOR INC DIMM DIMM, DIMM168 168 unknown EAR99 8542.32.00.28
IS43TR16640A-187FBL
Integrated Silicon Solution Inc
Check for Price Obsolete 1.0737 Gbit 16 64MX16 1.5 V 13.125 ns MULTI BANK PAGE BURST DDR DRAM AUTO SELF REFRESH MODE, ALSO OPERATES AT 1.35 V NOMINAL SUPPLY 1 1 64000000 67.1089 M SYNCHRONOUS YES 1.575 V 1.425 V CMOS OTHER R-PBGA-B96 95 °C 96 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES BALL 800 µm BOTTOM 1.2 mm 13 mm 9 mm INTEGRATED SILICON SOLUTION INC BGA TFBGA, 96 compliant EAR99 8542.32.00.32
VR5DP287218FBZ
Viking Technology
Check for Price Yes Yes Obsolete 9.6637 Gbit 72 128MX72 1.8 V 400 ps SINGLE BANK PAGE BURST DDR DRAM MODULE AUTO/SELF REFRESH; SEATED HGT-NOM; WD-MAX 1 1 128000000 134.2177 M SYNCHRONOUS YES 1.9 V 1.7 V CMOS OTHER R-XDMA-N200 85 °C NOT SPECIFIED NOT SPECIFIED 200 UNSPECIFIED DIMM RECTANGULAR MICROELECTRONIC ASSEMBLY NO NO LEAD DUAL 29.972 mm 67.564 mm 3.556 mm VIKING TECHNOLOGY MODULE DIMM, 200 unknown EAR99 8542.32.00.36
HY5DU281622FTP-H
SK Hynix Inc
Check for Price Yes Obsolete 134.2177 Mbit 16 8MX16 2.5 V 750 ps 133 MHz 4096 FOUR BANK PAGE BURST DDR1 DRAM AUTO/SELF REFRESH COMMON 2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 2,4,8 15 mA 230 µA 2.7 V 2.3 V CMOS COMMERCIAL R-PDSO-G66 Not Qualified e6 70 °C 66 PLASTIC/EPOXY TSSOP TSSOP66,.46 RECTANGULAR SMALL OUTLINE YES TIN BISMUTH GULL WING 650 µm DUAL 1.194 mm 22.225 mm 10.16 mm SK HYNIX INC TSOP2 TSSOP, TSSOP66,.46 66 unknown EAR99 8542.32.00.02
IC41LV44002-50TI
Integrated Silicon Solution Inc
Check for Price No Obsolete 16.7772 Mbit 4 4MX4 3.3 V 50 ns 2048 EDO PAGE EDO DRAM RAS ONLY CAS BEFORE RAS /HIDDEN REFRESH COMMON 1 1 4000000 4.1943 M 3-STATE NO NO 500 µA 120 µA 3.6 V 3 V CMOS INDUSTRIAL R-PDSO-G24 Not Qualified e0 85 °C -40 °C 24 PLASTIC/EPOXY TSOP TSOP24/26,.36 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES Tin/Lead (Sn/Pb) GULL WING DUAL INTEGRATED SILICON SOLUTION INC compliant EAR99 8542.32.00.02
MT42L192M32D1LD-25AT:A
Micron Technology Inc
Check for Price Active 6.4425 Gbit 32 192MX32 1.8 V 10 ns 2048 MULTI BANK PAGE BURST LPDDR2 DRAM SELF REFRESH; IT ALSO REQUIRES 1.2V NOM 1 1 192000000 201.3266 M SYNCHRONOUS YES 5 µA 1.95 V 1.7 V CMOS S-PBGA-B220 220 PLASTIC/EPOXY VFBGA SQUARE GRID ARRAY, VERY THIN PROFILE, FINE PITCH YES BALL 500 µm BOTTOM 1 mm 14 mm 14 mm MICRON TECHNOLOGY INC VFBGA, compliant EAR99 8542.32.00.36
K4S640832F-TC75
Samsung Semiconductor
Check for Price No Obsolete 67.1089 Mbit 8 8MX8 3.3 V 5.4 ns 133 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 8000000 8.3886 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 1 mA 135 µA 3.6 V 3 V CMOS COMMERCIAL R-PDSO-G54 Not Qualified e0 70 °C 54 PLASTIC/EPOXY TSOP2 TSOP54,.46,32 RECTANGULAR SMALL OUTLINE, THIN PROFILE YES TIN LEAD GULL WING 800 µm DUAL 1.2 mm 22.22 mm 10.16 mm SAMSUNG SEMICONDUCTOR INC TSOP2 TSOP2, TSOP54,.46,32 54 unknown EAR99 8542.32.00.02
MT48LC16M8A2FB-75:G
Micron Technology Inc
Check for Price No Obsolete 134.2177 Mbit 8 16MX8 3.3 V 5.4 ns 133 MHz 4096 FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH COMMON 1,2,4,8 1 1 16000000 16.7772 M SYNCHRONOUS 3-STATE YES 1,2,4,8,FP 2 mA 310 µA 3.6 V 3 V CMOS COMMERCIAL R-PBGA-B60 Not Qualified e0 70 °C 60 PLASTIC/EPOXY TFBGA BGA60,8X15,32 RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN LEAD SILVER BALL 800 µm BOTTOM 1.2 mm 16 mm 8 mm MICRON TECHNOLOGY INC BGA 8 X 16 MM, PLASTIC, FBGA-60 60 not_compliant EAR99 8542.32.00.02
K4S563233F-HG1L0
Samsung Semiconductor
Check for Price Yes Obsolete 268.4355 Mbit 32 8MX32 3 V 7 ns FOUR BANK PAGE BURST SYNCHRONOUS DRAM AUTO/SELF REFRESH 1 1 8000000 8.3886 M SYNCHRONOUS YES 3.6 V 2.7 V CMOS OTHER R-PBGA-B90 Not Qualified e1 3 85 °C -25 °C 90 PLASTIC/EPOXY TFBGA RECTANGULAR GRID ARRAY, THIN PROFILE, FINE PITCH YES TIN SILVER COPPER BALL 800 µm BOTTOM 1.2 mm 13 mm 8 mm SAMSUNG SEMICONDUCTOR INC BGA TFBGA, 90 compliant EAR99 8542.32.00.24