Parametric results for: K4W2G1646C-HC11 under DRAMs

All Filters Access Mode Access Time-Max Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Refresh Cycles Supply Voltage-Nom (Vsup) Access Mode (1)

MULTI BANK PAGE BURST 1

2 hits Apply

Access Time-Max (1)

195 ps 2

2 hits Apply

AUTO/SELF REFRESH 1

2 hits Apply

Clock Frequency-Max (fCLK) (1)

933 MHz 1

2 hits Apply

COMMON 1

2 hits Apply

8 1

2 hits Apply

R-PBGA-B96 2

2 hits Apply

13.3 mm 1

2 hits Apply

Manufacturer (1)

Samsung Semiconductor 2

2 hits Apply

Memory Density (1)

2.1475 Gbit 2

2 hits Apply

DDR DRAM 1 GDDR3 DRAM 1

2 hits Apply

Memory Width (1)

16 2

2 hits Apply

1.0 1

2 hits Apply

1 1

2 hits Apply

96 2

2 hits Apply

134.2177 M 2

2 hits Apply

1.28E8 2

2 hits Apply

SYNCHRONOUS 1

2 hits Apply

85.0 °C 1 95.0 °C 1

Min (°C) - Max (°C)

2 hits Apply

0.0 °C 2

2 hits Apply

Organization (1)

128MX16 2

2 hits Apply

3-STATE 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

FBGA 1 TFBGA 1

2 hits Apply

BGA96,9X16,32 1

2 hits Apply

RECTANGULAR 2

2 hits Apply

GRID ARRAY, FINE PITCH 1 GRID ARRAY, THIN PROFILE, FINE PITCH 1

2 hits Apply

Refresh Cycles (1)

8192 1

2 hits Apply

Supply Voltage-Nom (Vsup) (1)

1.5 V 2

2 hits Apply