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MT47H64M16NF-25E:M
Micron Technology Inc
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$3.9371 Buy | Yes | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 10 mA | 260 µA | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | Not Qualified | e1 | 85 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | BGA | FBGA-84 | 84 | Not Compliant | EAR99 | 8542.32.00.32 | |||||
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MT47H64M16NF-25EAAT:M
Micron Technology Inc
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Check for Price Buy | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 10 mA | 260 µA | 1.9 V | 1.7 V | CMOS | R-PBGA-B84 | e1 | 105 °C | -40 °C | 260 | AEC-Q100 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | FBGA-84 | Compliant | EAR99 | 8542.32.00.32 | |||||||
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MT47H64M16NF-25EXIT:M
Micron Technology Inc
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Check for Price Buy | Yes | Obsolete | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | e1 | 85 °C | -40 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn/Ag/Cu) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | 8 X 12.50 MM, ROHS COMPLIANT, FBGA-84 | Compliant | EAR99 | 8542.32.00.32 | ||||||||||||||||
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MT47H64M16NF-25EIT:MT
Micron Technology Inc
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Check for Price Buy | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 38 mA | 260 µA | 1.9 V | 1.7 V | CMOS | INDUSTRIAL | R-PBGA-B84 | e1 | 95 °C | -40 °C | 260 | AEC-Q100 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | TFBGA, BGA84,9X15,32 | Compliant | EAR99 | 8542.32.00.32 | ||||||
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MT47H64M16NF-25E:MTR
Micron Technology Inc
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Check for Price Buy | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | MULTI BANK PAGE BURST | DDR2 DRAM | SELF REFRESH | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 1.9 V | 1.7 V | CMOS | OTHER | R-PBGA-B84 | e1 | 85 °C | 260 | 30 | 84 | PLASTIC/EPOXY | BGA | RECTANGULAR | GRID ARRAY | YES | TIN SILVER COPPER | BALL | BOTTOM | BGA, | Not Compliant | EAR99 | 8542.32.00.32 | ||||||||||||||||||||||
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MT47H64M16NF-25EAIT:M
Micron Technology Inc
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Check for Price Buy | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 10 mA | 210 µA | 1.9 V | 1.7 V | CMOS | R-PBGA-B84 | 95 °C | -40 °C | 260 | AEC-Q100 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | FBGA-84 | Compliant | EAR99 | 8542.32.00.32 | |||||||||
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MT47H64M16NF-25EAAT:MTR
Micron Technology Inc
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Check for Price Buy | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 4,8 | 10 mA | 260 µA | 1.9 V | 1.7 V | CMOS | R-PBGA-B84 | e1 | 105 °C | -40 °C | 260 | AEC-Q100 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | TFBGA, BGA84,9X15,32 | Compliant | EAR99 | 8542.32.00.32 | ||||||||
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MT47H64M16NF-25EIT:M
Micron Technology Inc
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Check for Price Buy | Yes | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | 3-STATE | YES | 4,8 | 10 mA | 260 µA | 1.9 V | 1.7 V | CMOS | R-PBGA-B84 | Not Qualified | e1 | 95 °C | -40 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | TIN SILVER COPPER | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | BGA | FBGA-84 | 84 | Compliant | EAR99 | 8542.32.00.32 | |||||
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MT47H64M16NF-25EIT:MTR
Micron Technology Inc
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Check for Price Buy | Yes | Active | 1.0737 Gbit | 16 | 64MX16 | 1.8 V | 400 ps | 400 MHz | 8192 | MULTI BANK PAGE BURST | DDR2 DRAM | AUTO/SELF REFRESH | COMMON | 4,8 | 1 | 1 | 64000000 | 67.1089 M | SYNCHRONOUS | YES | 4,8 | 10 mA | 260 µA | 1.9 V | 1.7 V | CMOS | R-PBGA-B84 | e1 | 95 °C | -40 °C | 260 | 30 | 84 | PLASTIC/EPOXY | TFBGA | BGA84,9X15,32 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5) | BALL | 800 µm | BOTTOM | 1.2 mm | 12.5 mm | 8 mm | TFBGA, BGA84,9X15,32 | Compliant | EAR99 | 8542.32.00.32 |