Parametric results for: MT53D512M32D2DS-053%20WT:... under DRAMs

All Filters Access Mode Additional Feature Clock Frequency-Max (fCLK) I/O Type Interleaved Burst Length JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Number of Functions Number of Ports Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup) Access Mode (2)

MULTI BANK PAGE BURST 1 SINGLE BANK PAGE BURST 8

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SELF REFRESH, IT ALSO REQUIRES 1.1V NOMINAL SUPPLY, TERM PITCH-MAX 9 SELF REFRESH; IT ALSO REQUIRES 1.8V NOM; TERM PITCH-MAX 1

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Clock Frequency-Max (fCLK) (1)

1.866 GHz 10

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COMMON 10

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16,32 9

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R-PBGA-B200 10

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e1 7

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14.5 mm 10

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Manufacturer (1)

Micron Technology Inc 10

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Memory Density (1)

17.1799 Gbit 10

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LPDDR4 DRAM 10

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Memory Width (1)

32 10

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1.0 10

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1 10

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200 10

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536.8709 M 10

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5.12E8 10

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SYNCHRONOUS 10

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85.0 °C 8 95.0 °C 1 125.0 °C 1

Min (°C) - Max (°C)

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-40.0 °C 2 -25.0 °C 8

Min (°C) - Max (°C)

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Organization (1)

512MX32 10

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3-STATE 10

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PLASTIC/EPOXY 10

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VFBGA 10

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BGA200,12X20,32/25 9 BGA200,12X22,32/25 1

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RECTANGULAR 10

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GRID ARRAY, VERY THIN PROFILE, FINE PITCH 10

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Supply Voltage-Nom (Vsup) (1)

1.1 V 10

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