Parametric results for: AT45DB081E-MHN-Y under Flash Memories

All Filters Additional Feature Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

IT ALSO OPERATES WITH 1.7V MIN WITH 85 MHZ FREQUENCY;256K-BIT EXTRA FLASH AVAILABLE 2

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Clock Frequency-Max (fCLK) (2)

85 MHz 1 133 MHz 2

Min (MHz) - Max (MHz)

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20 3

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100000.0 Write/Erase Cycles 3

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R-PDSO-N8 3

3 hits Apply

e4 3

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6 mm 3

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Manufacturer (3)

Adesto Technologies Corporation 1 Dialog Semiconductor GmbH 1 Renesas Electronics Corporation 1

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Memory Density (1)

8.3886 Mbit 3

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FLASH 3

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Memory Width (2)

1 1 8 2

Min - Max

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1 3

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1.0 3

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8 3

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1.0486 M 2 8.3886 M 1

Min (words) - Max (words)

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1000000.0 2 8000000.0 1

Min - Max

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SYNCHRONOUS 3

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85.0 °C 3

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-40.0 °C 3

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Organization (2)

1MX8 2 8MX1 1

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3-STATE 2

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PLASTIC/EPOXY 3

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HVSON 3

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SOLCC8,.25 3

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RECTANGULAR 3

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SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE 3

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Supply Voltage-Nom (Vsup) (1)

3 V 3

3 hits Apply