Parametric results for: S25FL512SAGMFI011 under Flash Memories

All Filters Additional Feature Alternate Memory Width Boot Block Clock Frequency-Max (fCLK) Data Retention Time-Min Endurance JESD-30 Code JESD-609 Code Length Manufacturer Memory Density Memory IC Type Memory Width Moisture Sensitivity Level Number of Functions Number of Terminals Number of Words Number of Words Code Operating Mode Operating Temperature-Max Operating Temperature-Min Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style Supply Voltage-Nom (Vsup)

IT ALSO HAVE MEMORY WIDTH X1 1

3 hits Apply

1 1 2 1 4 1

Min - Max

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BOTTOM/TOP 1

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Clock Frequency-Max (fCLK) (1)

133 MHz 3

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20 3

3 hits Apply

100000.0 Write/Erase Cycles 3

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R-PDSO-G16 3

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e3 2

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10.3 mm 3

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Manufacturer (3)

Cypress Semiconductor 1 Infineon Technologies AG 1 Spansion 1

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Memory Density (2)

512.7537 Mbit 2 536.8709 Mbit 1

Min (bit) - Max (bit)

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FLASH 3

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Memory Width (2)

4 1 8 2

Min - Max

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3 2

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1.0 3

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16 3

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64.0942 M 2 134.2177 M 1

Min (words) - Max (words)

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6.4E7 2 1.28E8 1

Min - Max

3 hits Apply

SYNCHRONOUS 3

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85.0 °C 3

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-40.0 °C 3

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Organization (2)

128MX4 1 64MX8 2

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3-STATE 2

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PLASTIC/EPOXY 3

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SOP 3

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SOP16,.4 3

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RECTANGULAR 3

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SMALL OUTLINE 3

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Supply Voltage-Nom (Vsup) (1)

3 V 3

3 hits Apply