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IS66WV51216DBLL-55BLI-TR
Integrated Silicon Solution Inc
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Check for Price | Yes | Yes | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 55 ns | APPLICATION SPECIFIC SRAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 130 µA | 28 µA | 3.6 V | 2.5 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | e3 | 1 | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | MATTE TIN | BALL | 750 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | INTEGRATED SILICON SOLUTION INC | TFBGA, BGA48,6X8,30 | compliant | 3A991.B.2.A | 8542.32.00.41 | ||||
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IS66WV51216DBLL-55BLI
Integrated Silicon Solution Inc
|
Check for Price | Yes | Obsolete | 8.3886 Mbit | 16 | 512KX16 | 3 V | 55 ns | PSEUDO STATIC RAM | COMMON | 1 | 512000 | 524.288 k | ASYNCHRONOUS | 3-STATE | PARALLEL | 130 µA | 28 µA | 3.6 V | 2.5 V | CMOS | INDUSTRIAL | R-PBGA-B48 | Not Qualified | 85 °C | -40 °C | 48 | PLASTIC/EPOXY | TFBGA | BGA48,6X8,30 | RECTANGULAR | GRID ARRAY, THIN PROFILE, FINE PITCH | YES | BALL | 750 µm | BOTTOM | 1.2 mm | 8 mm | 6 mm | INTEGRATED SILICON SOLUTION INC | 6 X 8 MM, LEAD FREE, MO-207, BGA-48 | compliant | 3A991.B.2.A | 8542.32.00.41 | DSBGA | 48 |