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Parametric » Optoelectronics » Laser Diodes

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1 - 20 of 27,589 results sorted by Number of Functions

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Part Number Composite Price
Risk Rank Pbfree Code Rohs Code Part Life Cycle Code Forward Current-Max Forward Voltage-Max Number of Functions Surface Mount Mounting Feature Peak Wavelength Output Power-Nom Threshold Current-Max Additional Feature Configuration Optoelectronic Device Type Response Time-Max Semiconductor Material Spectral Bandwidth JESD-609 Code Operating Temperature-Max Operating Temperature-Min Shape Terminal Finish Size Ihs Manufacturer
Package Description
LNCQ05PS
Panasonic Electronic Components
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Obsolete 1 660 nm 50 mW 35 mA LASER DIODE 60 °C -10 °C ROUND 1 mm PANASONIC CORP
ML925B11F-02
Mitsubishi Electric
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Obsolete 60 mA 1.8 V 1 NO THROUGH HOLE MOUNT 1.55 µm 6 mW 30 mA SINGLE WITH BUILT-IN PHOTO DIODE LASER DIODE 400 ps InGaAsP 85 °C -20 °C ROUND 2 mm MITSUBISHI ELECTRIC CORP HERMETIC SEALED PACKAGE-4
L8446-04
Hamamatsu Photonics
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Obsolete 1 808 nm 1 W 500 mA HIGH STABILITY SINGLE LASER DIODE ROUND 2.8 mm HAMAMATSU PHOTONICS KK
HL1221AC
Renesas Electronics Corporation
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Transferred 1 1.2 µm 5 mW 80 mA SINGLE LASER DIODE 50 °C RECTANGULAR RENESAS TECHNOLOGY CORP
DL-7140-201K
SANYO Electric Co Ltd
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Obsolete 130 mA 1 NO THROUGH HOLE MOUNT 783 nm 80 mW 50 mA SINGLE LASER DIODE 60 °C -10 °C ROUND 1 mm SANYO ELECTRIC CO LTD
ML99225
Mitsubishi Electric
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Obsolete 800 mA 2 V 1 1.48 µm 220 mW 40 mA HIGH RELIABILITY SINGLE LASER DIODE InGaAsP 3 nm 30 °C 20 °C MITSUBISHI ELECTRIC CORP
SPLMB98-F
OSRAM GmbH
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No Obsolete 1 980 nm 30 W 12 A HIGH RELIABILITY LASER DIODE e0 40 °C 10 °C RECTANGULAR Tin/Lead (Sn/Pb) 10 mm OSRAM OPTO SEMICONDUCTORS GMBH
SPLMB98-F
OSRAM Opto Semiconductors
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No Obsolete 1 980 nm 30 W 12 A HIGH RELIABILITY LASER DIODE e0 40 °C 10 °C RECTANGULAR Tin/Lead (Sn/Pb) 10 mm OSRAM OPTO SEMICONDUCTORS GMBH
CW0500-T3-OO
TE Connectivity Ltd
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Active 1 808 nm 500 mW HIGH RELIABILITY SINGLE WITH BUILT-IN PHOTO DIODE, THERMISTOR AND TE COOLER LASER DIODE 30 °C -20 °C ROUND 2.5 mm TE CONNECTIVITY LTD TO-3, 8 PIN
LNCQ10PS
Panasonic Electronic Components
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Active 1 657 nm 50 mW 50 mA SINGLE LASER DIODE 70 °C -10 °C ROUND 1 mm PANASONIC CORP L5, 3 PIN
SCW1501G-100GC
TE Connectivity Ltd
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Active 1 1.55 µm 1 mW 40 mA LASER DIODE 70 °C -20 °C RECTANGULAR TE CONNECTIVITY LTD HARMETICALLY SEALED, DIP-14
ML9SM11-03-09
Mitsubishi Electric
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Obsolete 85 mA 1.8 V 1 1.533 µm 20 mW 35 mA SINGLE LASER DIODE 150 ps InGaAsP 35 °C 15 °C MITSUBISHI ELECTRIC CORP
ML9SM22-03-32
Mitsubishi Electric
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Obsolete 85 mA 1.8 V 1 1.59 µm 20 mW 35 mA SINGLE LASER DIODE 150 ps InGaAsP 35 °C 15 °C MITSUBISHI ELECTRIC CORP
DL-3148-237
SANYO Electric Co Ltd
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Obsolete 1 635 nm 7 mW 40 mA SINGLE WITH BUILT-IN PHOTO DIODE LASER DIODE 50 °C -10 °C ROUND 1 mm SANYO ELECTRIC CO LTD
C-13-001-E-HG
Source Photonics
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No No Obsolete 1 1.31 µm 10 mW 15 mA SINGLE WITH BUILT-IN PHOTO DIODE LASER DIODE 85 °C -40 °C ROUND 2.3 mm SOURCE PHOTONICS INC HERMETIC SEALED, TO-18, 4 PIN
C-13-001-E-AB
Source Photonics
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No No Obsolete 1 1.31 µm 10 mW 15 mA SINGLE WITH BUILT-IN PHOTO DIODE LASER DIODE 85 °C -40 °C ROUND 1 mm SOURCE PHOTONICS INC HERMETIC SEALED, TO-18, 4 PIN
GH6C005B3B
Sharp Corp
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Obsolete 1 780 nm 4.3 mW 39 mA SINGLE WITH BUILT-IN PHOTO DIODE LASER DIODE RECTANGULAR 3.2 mm SHARP CORP
ML9SM31-01-00
Mitsubishi Electric
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Obsolete 1 1.53 µm 30 mA SINGLE WITH BUILT-IN EA MODULATOR LASER DIODE MITSUBISHI ELECTRIC CORP
ML9SM31-02-21
Mitsubishi Electric
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Obsolete 1 1.545 µm 30 mA SINGLE WITH BUILT-IN EA MODULATOR LASER DIODE MITSUBISHI ELECTRIC CORP
HL6738MG
Ushio Opto Semiconductors Inc
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Active 1 690 nm 35 mW 70 mA SINGLE WITH BUILT-IN PHOTO DIODE LASER DIODE 70 °C -10 °C ROUND 1.6 mm USHIO OPTO SEMICONDUCTORS INC LD/MG, 3 PIN

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