Parametric results for: S8850 under RF Small Signal Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) FET Technology Highest Frequency Band JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Surface Mount

SOURCE 1

23 hits Apply

Configuration (1)

SINGLE 2

23 hits Apply

DS Breakdown Voltage-Min (1)

15 V 2

23 hits Apply

Drain Current-Max (ID) (1)

125 mA 2

23 hits Apply

JUNCTION 1 METAL-OXIDE SEMICONDUCTOR 1

23 hits Apply

Highest Frequency Band (1)

KU BAND 2

23 hits Apply

R-CDFM-F2 1 R-XUUC-N4 1

23 hits Apply

e0 1

23 hits Apply

Manufacturer (3)

ABLIC Inc. 20 Seiko Instruments Inc 1 Toshiba America Electronic Components 2

23 hits Apply

Number of Elements (1)

1 2

23 hits Apply

Number of Terminals (2)

2 1 4 1

23 hits Apply

DEPLETION MODE 2

23 hits Apply

175.0 °C 1

23 hits Apply

CERAMIC, METAL-SEALED COFIRED 1 UNSPECIFIED 1

23 hits Apply

RECTANGULAR 2

23 hits Apply

FLANGE MOUNT 1 UNCASED CHIP 1

23 hits Apply

Obsolete 23

23 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 1

23 hits Apply

1 W 1

23 hits Apply

Surface Mount (1)

YES 2

23 hits Apply