Parametric results for: HGT1S10N120BNST under IGBTs

All Filters Additional Feature Case Connection Collector Current-Max (IC) Collector-Emitter Voltage-Max Configuration Fall Time-Max (tf) Gate-Emitter Voltage-Max JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

LOW CONDUCTION LOSS 2

2 hits Apply

COLLECTOR 2

2 hits Apply

Collector Current-Max (IC) (1)

35 A 2

2 hits Apply

Collector-Emitter Voltage-Max (1)

1.2 kV 2

2 hits Apply

Configuration (1)

SINGLE 2

2 hits Apply

200 ns 1

2 hits Apply

20 V 2

2 hits Apply

TO-263AB 2

2 hits Apply

R-PSSO-G2 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 onsemi 1

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

2 2

2 hits Apply

150.0 °C 2

2 hits Apply

-55.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 1 Transferred 1

2 hits Apply

Yes 2

2 hits Apply

260 2

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

298 W 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply