Parametric results for: Other Transistors

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1 - 10 of 112,544 results sorted by FET Technology

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Compare Most Relevant Technical Compliance Operating Conditions Physical Other
Part Number Composite Price
Pbfree Code
Rohs Code
Part Life Cycle Code
Polarity/Channel Type Surface Mount
Configuration Number of Terminals
DS Breakdown Voltage-Min
Highest Frequency Band
Number of Elements Drain Current-Max (Abs) (ID)
Power Gain-Min (Gp)
Drain Current-Max (ID)
Additional Feature
FET Technology Operating Mode
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Transistor Application
Transistor Element Material
JESD-30 Code
JESD-609 Code
Qualification Status
Operating Temperature-Max
Package Body Material
Package Shape
Package Style
Terminal Finish
Terminal Form
Terminal Position
Ihs Manufacturer
Package Description
Reach Compliance Code
ECCN Code
HTS Code
Source Content uid
RHF1203CM
ROHM Semiconductor
Check for Price Active N-CHANNEL YES SINGLE 4 4 V X BAND 1 60 mA 9 dB 60 mA HETERO-JUNCTION DEPLETION MODE 200 mW AMPLIFIER INDIUM GALLIUM ARSENIDE O-CRDB-F4 125 °C CERAMIC, METAL-SEALED COFIRED ROUND DISK BUTTON FLAT RADIAL ROHM CO LTD DISK BUTTON, O-CRDB-F4 compliant EAR99 8541.21.00.75
NE32584C-T1A
Renesas Electronics Corporation
Check for Price Yes Yes Obsolete N-CHANNEL YES SINGLE 4 3 V KU BAND 1 11 dB 20 mA LOW NOISE HETERO-JUNCTION DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE X-CXMW-F4 e0 Not Qualified CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE TIN LEAD FLAT UNSPECIFIED RENESAS ELECTRONICS CORP unknown EAR99 NE32584C-T1A
RHF1203CL
ROHM Semiconductor
Check for Price Active N-CHANNEL YES SINGLE 4 4 V X BAND 1 60 mA 9 dB 60 mA HETERO-JUNCTION DEPLETION MODE 200 mW AMPLIFIER INDIUM GALLIUM ARSENIDE O-CRDB-F4 125 °C CERAMIC, METAL-SEALED COFIRED ROUND DISK BUTTON FLAT RADIAL ROHM CO LTD DISK BUTTON, O-CRDB-F4 compliant EAR99 8541.21.00.75
NE32584C-SL
Renesas Electronics Corporation
Check for Price Obsolete N-CHANNEL YES SINGLE 4 3 V KU BAND 1 11 dB 20 mA LOW NOISE HETERO-JUNCTION DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE X-CXMW-F4 Not Qualified CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE FLAT UNSPECIFIED RENESAS ELECTRONICS CORP unknown EAR99 NE32584C-SL
NE32584C-T1
Renesas Electronics Corporation
Check for Price Yes Yes Obsolete N-CHANNEL YES SINGLE 4 3 V KU BAND 1 11 dB 20 mA LOW NOISE HETERO-JUNCTION DEPLETION MODE AMPLIFIER GALLIUM ARSENIDE X-CXMW-F4 e0 Not Qualified CERAMIC, METAL-SEALED COFIRED UNSPECIFIED MICROWAVE TIN LEAD FLAT UNSPECIFIED RENESAS ELECTRONICS CORP unknown EAR99 NE32584C-T1
BF556A
North American Philips Discrete Products Div
Check for Price No Transferred N-CHANNEL YES JUNCTION 250 mW e0 150 °C Tin/Lead (Sn/Pb) NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV , unknown EAR99
JANS2N3821
Motorola Semiconductor Products
Check for Price No Obsolete N-CHANNEL NO JUNCTION 300 mW e0 200 °C Tin/Lead (Sn/Pb) MOTOROLA INC , unknown EAR99
FM1110
National Semiconductor Corporation
Check for Price No Obsolete N-CHANNEL NO JUNCTION 500 mW e0 200 °C Tin/Lead (Sn/Pb) NATIONAL SEMICONDUCTOR CORP compliant EAR99 FM1110
BF256C
Texas Instruments
Check for Price No Obsolete N-CHANNEL NO JUNCTION 300 mW 150 °C TEXAS INSTRUMENTS INC , not_compliant EAR99 BF256C
MPF106
Allegro MicroSystems LLC
Check for Price No Active N-CHANNEL NO JUNCTION 200 mW e0 125 °C Tin/Lead (Sn/Pb) ALLEGRO MICROSYSTEMS LLC unknown EAR99