Parametric results for: 2n7000 under Small Signal Field-Effect Transistors
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2N7000-GP013
Microchip Technology Inc
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | MICROCHIP TECHNOLOGY INC | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 | ||||||||||||||||||
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2N7000RLRM
onsemi
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Check for Price | No | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | 235 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN LEAD | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | CASE 29-11, TO-226, 3 PIN | not_compliant | EAR99 | TO-92 | 3 | CASE 29-11 | onsemi | |||||||||
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2N7000RLRPG
onsemi
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SILICON | TO-92 | O-PBCY-T3 | e1 | Not Qualified | 150 °C | 260 | 40 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Silver/Copper (Sn/Ag/Cu) | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | LEAD FREE, CASE 29-11, TO-226, 3 PIN | unknown | EAR99 | TO-92 (TO-226) 5.33mm Body Height | 3 | 29-11 | onsemi | |||||||||
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2N7000ZL1G
onsemi
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | SILICON | TO-92 | O-PBCY-T3 | e1 | Not Qualified | 150 °C | 260 | PLASTIC/EPOXY | ROUND | CYLINDRICAL | TIN SILVER COPPER | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | LEAD FREE, CASE 29-11, 3 PIN | unknown | EAR99 | TO-92 | 3 | CASE 29-11 | |||||||||||
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2N7000J14Z
Fairchild Semiconductor Corporation
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | O-PBCY-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | TO-92 | 3 | |||||||||||||||||
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2N7000
Continental Device India Ltd
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Check for Price | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 625 mW | 625 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | TS-16949 | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | CONTINENTAL DEVICE INDIA LTD | compliant | EAR99 | 8541.21.00.95 | ||||||||||||||||
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2N7000D75Z
onsemi
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Check for Price | Yes | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e3 | Not Qualified | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | MATTE TIN | THROUGH-HOLE | BOTTOM | ON SEMICONDUCTOR | CYLINDRICAL, O-PBCY-T3 | compliant | EAR99 | |||||||||||||
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2N7000TA
Calogic Inc
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | CALOGIC LLC | unknown | EAR99 | 8541.21.00.95 | ||||||||||||||||||
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2N7000RLRM
Motorola Semiconductor Products
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Check for Price | No | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 200 mA | 5 Ω | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 350 mW | 400 mW | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | THROUGH-HOLE | BOTTOM | MOTOROLA INC | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 | 8541.21.00.95 | ||||||||||||
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2N7000N3
Supertex Inc
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Check for Price | Yes | Transferred | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 3 | 60 V | 1 | 5 Ω | HIGH INPUT IMPEDANCE | 5 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 1 W | SWITCHING | SILICON | TO-92 | O-PBCY-T3 | 150 °C | -55 °C | PLASTIC/EPOXY | ROUND | CYLINDRICAL | THROUGH-HOLE | BOTTOM | SUPERTEX INC | CYLINDRICAL, O-PBCY-T3 | unknown | EAR99 |