Parametric results for: BSC042N03MSG under Power Field-Effect Transistors

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Select parts from the table below to compare.
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DMP3160LQ-7
Diodes Incorporated
$0.1009 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 2.7 A 122 mΩ HIGH RELIABILITY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.08 W 8 A SWITCHING SILICON R-PDSO-G3 e3 AEC-Q101 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 Diodes Incorporated
PJA3407_R1_00001
PanJit Semiconductor
$0.1011 Yes Yes Not Recommended P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 3.8 A 65 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 15.2 A SWITCHING SILICON R-PDSO-G3 e3 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL PANJIT INTERNATIONAL INC compliant EAR99 GREEN, PLASTIC PACKAGE-3
SSM3J331R,LF
Toshiba America Electronic Components
$0.1015 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 4 A 75 mΩ 60 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1 W 10 A SWITCHING SILICON R-PDSO-F3 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE FLAT DUAL TOSHIBA CORP unknown EAR99 Toshiba SOT-23F, 3 PIN
BSP89H6327XTSA1
Infineon Technologies AG
$0.1027 Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 240 V 1 350 mA 6 Ω LOGIC LEVEL COMPATIBLE METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.8 W 1.4 A SILICON R-PDSO-G4 e3 AEC-Q101 1 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 Infineon SMALL OUTLINE, R-PDSO-G4 4
MMFTP3401-AQ
Diotec Semiconductor AG
$0.1030 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 30 V 1 4 A 50 mΩ 60 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.4 W 1.4 W 27 A SWITCHING SILICON TO-236 R-PDSO-G3 e3 AEC-Q101 1 150 °C -55 °C 260 10 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIOTEC SEMICONDUCTOR AG not_compliant Diotec
IRLML2244TRPBF
Infineon Technologies AG
$0.1031 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 4.3 A 54 mΩ 110 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W 1.3 W 18 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 Infineon SOT-23, 3 PIN 8541.29.00.95
DMP2305U-7
Diodes Incorporated
$0.1046 Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 4.2 A 60 mΩ 64 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 10 A SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL DIODES INC compliant EAR99 Diodes Incorporated SOT-23, 3 PIN 3
BUK6D43-60EX
Nexperia
$0.1063 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 6 60 V 1 13 A 43 mΩ 24 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 52 A SWITCHING SILICON S-PDSO-N6 e3 AEC-Q101; IEC-60134 1 175 °C -55 °C 260 30 DRAIN PLASTIC/EPOXY SQUARE SMALL OUTLINE TIN NO LEAD DUAL NEXPERIA compliant EAR99 Nexperia DFN2020MD, 6 PIN 6 DFN SOT1220
IRLML6401TRPBF
Infineon Technologies AG
$0.1065 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 12 V 1 4.3 A 50 mΩ ULTRA LOW RESISTANCE 33 mJ 125 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W 1.3 W 34 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 Infineon SOT-23, 3 PIN 8541.29.00.95
AO7408
Alpha & Omega Semiconductor
$0.1078 Yes Active N-CHANNEL YES SINGLE 1 2 A METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 350 mW 150 °C ALPHA & OMEGA SEMICONDUCTOR LTD compliant EAR99 Alpha & Omega Semiconductors