Parametric results for: Power Field-Effect Transistors

Filter Your Search

1 - 10 of 176,228 results

|
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Sorted By: FET Technology
Select parts from the table below to compare.
Compare
Compare
GS66502B-E01-MR
GaN Systems
Check for Price Yes Obsolete N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
ISL73023SEHX/SAMPLE
Renesas Electronics Corporation
Check for Price No Active N-CHANNEL YES SINGLE 30 100 V 1 60 A 12 mΩ HIGH RELIABILITY 18 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING SILICON R-XBCC-N30 MIL-38535 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP compliant EAR99 Renesas Electronics PFL ISLDUMMY00
ISL70023SEHML
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 100 V 1 60 A 12 mΩ HIGH RELIABILITY 18 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING SILICON R-XBCC-N4 e4 MIL-38535 125 °C -55 °C DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) NO LEAD BOTTOM RENESAS ELECTRONICS CORP compliant EAR99 Renesas Electronics CLCC J4.A , 4
EPC2035
Efficient Power Conversion
$0.6237 Yes Contact Manufacturer N-CHANNEL SINGLE WITH BUILT-IN DIODE 4 60 V 1 1.7 A 45 mΩ ULTRA LOW RESISTANCE HIGH ELECTRON MOBILITY ENHANCEMENT MODE 24 A SWITCHING GALLIUM NITRIDE S-XXUC-X4 150 °C -40 °C NOT SPECIFIED NOT SPECIFIED UNSPECIFIED SQUARE UNCASED CHIP UNSPECIFIED UNSPECIFIED EFFICIENT POWER CONVERSION CORP unknown EAR99 UNCASED CHIP, S-XXUC-X4
GS-065-011-1-L-MR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 8 650 V 1 11 A 190 mΩ 0.4 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 19 A SWITCHING GALLIUM NITRIDE R-PDSO-N8 3 150 °C -55 °C 260 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE NO LEAD DUAL GAN SYSTEMS INC compliant GaN Systems
GS66502B-MR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
EPC2218
Efficient Power Conversion
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 100 V 1 60 A 3.2 mΩ 4.3 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 231 A SWITCHING GALLIUM NITRIDE R-XUUC-N8 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP NO LEAD UPPER EFFICIENT POWER CONVERSION CORP unknown DIE-8
GS66502B-TR
GaN Systems
Check for Price Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
ISL73023SEHML
Renesas Electronics Corporation
Check for Price Yes Active N-CHANNEL YES SINGLE 4 100 V 1 60 A 12 mΩ HIGH RELIABILITY 18 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING SILICON R-XBCC-N4 e4 MIL-38535 125 °C -55 °C DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) NO LEAD BOTTOM RENESAS ELECTRONICS CORP compliant EAR99 Renesas Electronics CLCC J4.A , 4
EPC2111
Efficient Power Conversion
$2.3231 Yes Contact Manufacturer N-CHANNEL YES SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE 21 30 V 2 16 A 19 mΩ 8 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 50 A SWITCHING GALLIUM NITRIDE R-XUUC-X21 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP UNSPECIFIED UPPER EFFICIENT POWER CONVERSION CORP unknown Efficient Power Conversion DIE-21