Parametric results for: 2N6788 under Power Field-Effect Transistors

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Manufacturer Part Number: 2n6788
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2N6788-QR-B
TT Electronics Power and Hybrid / Semelab Limited
Check for Price Buy No No Obsolete N-CHANNEL NO SINGLE 3 100 V 1 6 A 345 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 24 A SWITCHING SILICON TO-205AF O-MBCY-W3 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM SEMELAB LTD BCY CYLINDRICAL, O-MBCY-W3 2 compliant EAR99
2N6788TX
Intersil Corporation
Check for Price Buy Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6 A 300 mΩ RADIATION HARDENED 100 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 24 A SWITCHING SILICON 110 ns 110 ns TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) 150 °C DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM INTERSIL CORP unknown EAR99 8541.29.00.95
JANTXV2N6788
Infineon Technologies AG
Check for Price Buy No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6 A 350 mΩ AVALANCHE RATED 0.242 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 24 A SWITCHING SILICON TO-205AF O-MBCY-W3 e0 Qualified MIL-19500/555 150 °C METAL ROUND CYLINDRICAL Tin/Lead (Sn/Pb) WIRE BOTTOM INFINEON TECHNOLOGIES AG HERMETIC SEALED, MODIFIED TO-39, 3 PIN unknown EAR99
2N6788LCC4
TT Electronics Power and Hybrid / Semelab Limited
Check for Price Buy No No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 16 100 V 1 4.5 A 345 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 18 A SWITCHING SILICON R-CQCC-N16 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER NO LEAD QUAD SEMELAB LTD LCC CHIP CARRIER, R-CQCC-N16 18 compliant EAR99
JAN2N6788U
Microsemi Corporation
Check for Price Buy No Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 15 100 V 1 4.5 A 350 mΩ HIGH RELIABILTY METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 18 A SILICON R-CQCC-N15 Qualified MIL-19500 150 °C NOT SPECIFIED NOT SPECIFIED SOURCE CERAMIC, METAL-SEALED COFIRED RECTANGULAR CHIP CARRIER NO LEAD QUAD MICROSEMI CORP CERAMIC, LCC-18/15 unknown EAR99 Microsemi Corporation
2N6788TXV
Fairchild Semiconductor Corporation
Check for Price Buy Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6 A 300 mΩ RADIATION HARDENED METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 24 A SWITCHING SILICON TO-205AF O-MBCY-W3 Not Qualified MILITARY STANDARD (USA) DRAIN METAL ROUND CYLINDRICAL WIRE BOTTOM FAIRCHILD SEMICONDUCTOR CORP CYLINDRICAL, O-MBCY-W3 unknown EAR99
2N6788
International Rectifier
Check for Price Buy No Transferred N-CHANNEL NO SINGLE 3 100 V 1 6 A 300 mΩ AVALANCHE RATED 76 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 20 W 24 A SWITCHING SILICON 110 ns 110 ns TO-205AF O-MBCY-W3 e0 Not Qualified MILITARY STANDARD (USA) 150 °C METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM INTERNATIONAL RECTIFIER CORP compliant
2N6788
Infineon Technologies AG
Check for Price Buy No Active N-CHANNEL NO SINGLE 3 100 V 1 6 A 300 mΩ AVALANCHE RATED 76 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 24 A SWITCHING SILICON TO-205AF O-MBCY-W3 e0 Not Qualified MILITARY STANDARD (USA) 150 °C -55 °C METAL ROUND CYLINDRICAL Tin/Lead (Sn/Pb) WIRE BOTTOM INFINEON TECHNOLOGIES AG unknown EAR99 Infineon
2N6788EBPBF
International Rectifier
Check for Price Buy Yes Yes Transferred N-CHANNEL NO SINGLE 3 100 V 1 300 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE SILICON TO-205AF O-MBCY-W3 Not Qualified CECC 260 40 METAL ROUND CYLINDRICAL WIRE BOTTOM INTERNATIONAL RECTIFIER CORP CYLINDRICAL, O-MBCY-W3 compliant EAR99
JANTX2N6788
International Rectifier
Check for Price Buy Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 6 A 350 mΩ AVALANCHE RATED 0.242 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 20 W 20 W 24 A SWITCHING SILICON 110 ns 110 ns TO-205AF O-MBCY-W3 e0 Not Qualified MIL-19500/555 150 °C METAL ROUND CYLINDRICAL TIN LEAD WIRE BOTTOM INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC HERMETIC SEALED, TO-39, 3 PIN unknown