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2N6788-QR-B
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price Buy | No | No | Obsolete | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 6 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 24 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | SEMELAB LTD | BCY | CYLINDRICAL, O-MBCY-W3 | 2 | compliant | EAR99 | |||||||||||||||
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2N6788TX
Intersil Corporation
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Check for Price Buy | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6 A | 300 mΩ | RADIATION HARDENED | 100 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 24 A | SWITCHING | SILICON | 110 ns | 110 ns | TO-205AF | O-MBCY-W3 | Not Qualified | MILITARY STANDARD (USA) | 150 °C | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | INTERSIL CORP | unknown | EAR99 | 8541.29.00.95 | |||||||||||||||
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JANTXV2N6788
Infineon Technologies AG
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Check for Price Buy | No | Active | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6 A | 350 mΩ | AVALANCHE RATED | 0.242 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 24 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Qualified | MIL-19500/555 | 150 °C | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | INFINEON TECHNOLOGIES AG | HERMETIC SEALED, MODIFIED TO-39, 3 PIN | unknown | EAR99 | |||||||||||||||
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2N6788LCC4
TT Electronics Power and Hybrid / Semelab Limited
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Check for Price Buy | No | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 16 | 100 V | 1 | 4.5 A | 345 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 18 A | SWITCHING | SILICON | R-CQCC-N16 | Not Qualified | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | SEMELAB LTD | LCC | CHIP CARRIER, R-CQCC-N16 | 18 | compliant | EAR99 | ||||||||||||||||
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JAN2N6788U
Microsemi Corporation
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Check for Price Buy | No | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 15 | 100 V | 1 | 4.5 A | 350 mΩ | HIGH RELIABILTY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 18 A | SILICON | R-CQCC-N15 | Qualified | MIL-19500 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | CHIP CARRIER | NO LEAD | QUAD | MICROSEMI CORP | CERAMIC, LCC-18/15 | unknown | EAR99 | Microsemi Corporation | ||||||||||||||||
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2N6788TXV
Fairchild Semiconductor Corporation
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Check for Price Buy | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6 A | 300 mΩ | RADIATION HARDENED | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 24 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | Not Qualified | MILITARY STANDARD (USA) | DRAIN | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | FAIRCHILD SEMICONDUCTOR CORP | CYLINDRICAL, O-MBCY-W3 | unknown | EAR99 | ||||||||||||||||||||
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2N6788
International Rectifier
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Check for Price Buy | No | Transferred | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 6 A | 300 mΩ | AVALANCHE RATED | 76 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 20 W | 24 A | SWITCHING | SILICON | 110 ns | 110 ns | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | MILITARY STANDARD (USA) | 150 °C | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | INTERNATIONAL RECTIFIER CORP | compliant | ||||||||||||||
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2N6788
Infineon Technologies AG
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Check for Price Buy | No | Active | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 6 A | 300 mΩ | AVALANCHE RATED | 76 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 24 A | SWITCHING | SILICON | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | MILITARY STANDARD (USA) | 150 °C | -55 °C | METAL | ROUND | CYLINDRICAL | Tin/Lead (Sn/Pb) | WIRE | BOTTOM | INFINEON TECHNOLOGIES AG | unknown | EAR99 | Infineon | ||||||||||||||
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2N6788EBPBF
International Rectifier
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Check for Price Buy | Yes | Yes | Transferred | N-CHANNEL | NO | SINGLE | 3 | 100 V | 1 | 300 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-205AF | O-MBCY-W3 | Not Qualified | CECC | 260 | 40 | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | INTERNATIONAL RECTIFIER CORP | CYLINDRICAL, O-MBCY-W3 | compliant | EAR99 | |||||||||||||||||||||
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JANTX2N6788
International Rectifier
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Check for Price Buy | Transferred | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 3 | 100 V | 1 | 6 A | 350 mΩ | AVALANCHE RATED | 0.242 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 20 W | 24 A | SWITCHING | SILICON | 110 ns | 110 ns | TO-205AF | O-MBCY-W3 | e0 | Not Qualified | MIL-19500/555 | 150 °C | METAL | ROUND | CYLINDRICAL | TIN LEAD | WIRE | BOTTOM | INTERNATIONAL RECTIFIER HIREL PRODUCTS LLC | HERMETIC SEALED, TO-39, 3 PIN | unknown |