Parametric results for: FCD5N60TM under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

159.0 mJ 2 230.0 mJ 2

Min (mJ) - Max (mJ)

5 hits Apply

DRAIN 4

5 hits Apply

Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 4

5 hits Apply

DS Breakdown Voltage-Min (1)

600 V 4

5 hits Apply

Drain Current-Max (Abs) (ID) (1)

4.6 A 1

5 hits Apply

Drain Current-Max (ID) (2)

4.6 A 2 7 A 2

Min (A) - Max (A)

5 hits Apply

Drain-source On Resistance-Max (2)

600 mΩ 2 950 mΩ 2

Min (Ω) - Max (Ω)

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 5

5 hits Apply

TO-252AA 2

5 hits Apply

R-PSSO-G2 4

5 hits Apply

e3 4

5 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 2 onsemi 3

5 hits Apply

1 4

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

2 4

5 hits Apply

ENHANCEMENT MODE 5

5 hits Apply

150.0 °C 5

5 hits Apply

PLASTIC/EPOXY 4

5 hits Apply

RECTANGULAR 4

5 hits Apply

SMALL OUTLINE 4

5 hits Apply

Active 3 Transferred 2

5 hits Apply

Yes 4

5 hits Apply

260 4

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 5

5 hits Apply

54 W 5

5 hits Apply

Surface Mount (1)

YES 5

5 hits Apply