Findchips: Parametric Search Results for FDD10AN06A0


Select Parts		Part Number

		FDD10AN06A0 onsemi
		FDD10AN06A0 Rochester Electronics LLC
		FDD10AN06A0_NL Fairchild Semiconductor Corporation
		FDD10AN06A0-F085 onsemi
		FDD10AN06A0_F085 Fairchild Semiconductor Corporation
		FDD10AN06A0_NL Rochester Electronics LLC
		FDD10AN06A0 Fairchild Semiconductor Corporation
		FDD10AN06A0_F085 onsemi

				Most Relevant								Technical						Compliance					Operating Conditions					Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Qualification Status	Reference Standard	Moisture Sensitivity Level	Operating Temperature-Max	Operating Temperature-Min	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Manufacturer Package Code	Reach Compliance Code	ECCN Code	Samacsys Manufacturer	Pin Count	HTS Code

$1.2164 Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ONSEMI

DPAK-3 / TO-252-3

TO-252AA, 3 PIN

369AS

not_compliant

EAR99

onsemi

Check for Price Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

COMMERCIAL

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

TO-252AA

TO-252AA, 3 PIN

unknown

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

TO-252AA

TO-252AA, 3 PIN

not_compliant

EAR99

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

AEC-Q101

175 °C

-55 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ON SEMICONDUCTOR

TO-252 3L (DPAK)

SMALL OUTLINE, R-PSSO-G2

369AS

not_compliant

EAR99

onsemi

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

AEC-Q101

175 °C

-55 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

DPAK

ROHS COMPLIANT PACKAGE-3/2

TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

not_compliant

EAR99

8541.29.00.95

Check for Price Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

COMMERCIAL

260

NOT SPECIFIED

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

TO-252AA

TO-252AA, 3 PIN

unknown

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

DPAK

TO-252AA, 3 PIN

TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

not_compliant

EAR99

8541.29.00.95

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

AEC-Q101

175 °C

-55 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ON SEMICONDUCTOR

SMALL OUTLINE, R-PSSO-G2

TO252A03

compliant

EAR99

onsemi

Compare

FDD10AN06A0

onsemi

$1.2164 Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ONSEMI

DPAK-3 / TO-252-3

TO-252AA, 3 PIN

369AS

not_compliant

EAR99

onsemi

FDD10AN06A0

Rochester Electronics LLC

Check for Price Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

COMMERCIAL

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

TO-252AA

TO-252AA, 3 PIN

unknown

FDD10AN06A0_NL

Fairchild Semiconductor Corporation

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

TO-252AA

TO-252AA, 3 PIN

not_compliant

EAR99

FDD10AN06A0-F085

onsemi

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

AEC-Q101

175 °C

-55 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ON SEMICONDUCTOR

TO-252 3L (DPAK)

SMALL OUTLINE, R-PSSO-G2

369AS

not_compliant

EAR99

onsemi

FDD10AN06A0_F085

Fairchild Semiconductor Corporation

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

AEC-Q101

175 °C

-55 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

DPAK

ROHS COMPLIANT PACKAGE-3/2

TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

not_compliant

EAR99

8541.29.00.95

FDD10AN06A0_NL

Rochester Electronics LLC

Check for Price Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

COMMERCIAL

260

NOT SPECIFIED

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

TO-252AA

TO-252AA, 3 PIN

unknown

FDD10AN06A0

Fairchild Semiconductor Corporation

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

Not Qualified

175 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

DPAK

TO-252AA, 3 PIN

TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

not_compliant

EAR99

8541.29.00.95

FDD10AN06A0_F085

onsemi

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

60 V

11 A

10.5 mΩ

429 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

135 W

SWITCHING

SILICON

TO-252AA

R-PSSO-G2

AEC-Q101

175 °C

-55 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ON SEMICONDUCTOR

SMALL OUTLINE, R-PSSO-G2

TO252A03

compliant

EAR99

onsemi

Parametric results for: FDD10AN06A0 under Power Field-Effect Transistors