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SCP-3623S
Sensitron Semiconductors
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Check for Price | No | No | Active | N-CHANNEL | NO | 2 BANKS, BRIDGE WITH BUILT-IN DIODE | 12 | 100 V | 4 | 40 A | 30 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-XDFM-P12 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | RECTANGULAR | FLANGE MOUNT | PIN/PEG | DUAL | SENSITRON SEMICONDUCTOR | MODULE | POWER MODULE-12 | 12 | compliant | EAR99 | |||||||||||||||
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SCP-3623
Sensitron Semiconductors
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Check for Price | No | No | Active | N-CHANNEL | NO | 2 BANKS, BRIDGE WITH BUILT-IN DIODE | 12 | 100 V | 4 | 40 A | 30 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-XDFM-P12 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | RECTANGULAR | FLANGE MOUNT | PIN/PEG | DUAL | SENSITRON SEMICONDUCTOR | MODULE | POWER MODULE-12 | 12 | compliant | EAR99 | |||||||||||||||
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DMHC10H170SFJ-13
Diodes Incorporated
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$1.1856 | Yes | Active | N-CHANNEL AND P-CHANNEL | YES | 2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 12 | 100 V | 2 | 2.9 A | 300 mΩ | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.1 W | 13 A | SWITCHING | SILICON | R-PDSO-N12 | e3 | AEC-Q101 | 1 | 150 °C | -55 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Matte Tin (Sn) | NO LEAD | DUAL | DIODES INC | V-DFN5045-12, 12 PIN | compliant | EAR99 | Diodes Incorporated | |||||||||
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FDMQ8203
onsemi
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$1.0004 | Yes | Yes | Active | N-CHANNEL AND P-CHANNEL | YES | 2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 12 | 100 V | 4 | 3.4 A | 110 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 W | 12 A | SWITCHING | SILICON | R-PDSO-N12 | e4 | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | NO LEAD | DUAL | ONSEMI | WDFN-12 | 5 X 4.50 MM, ROHS COMPLIANT, MLP, 12 PIN | compliant | EAR99 | onsemi | 511CS | ||||||||
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FDMQ8203
Fairchild Semiconductor Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL AND P-CHANNEL | YES | 2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 12 | 100 V | 4 | 3.4 A | 110 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 W | 12 A | SWITCHING | SILICON | R-PDSO-N12 | e4 | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NICKEL PALLADIUM GOLD | NO LEAD | DUAL | FAIRCHILD SEMICONDUCTOR CORP | MLP | 5 X 4.50 MM, ROHS COMPLIANT, MLP, 12 PIN | 12 | unknown | EAR99 | 12LD MLP, DUAL, NON-JEDEC, 4.5 X 5.0MM. | 8541.29.00.95 | |||||||
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UPA1576H
Renesas Electronics Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 100 V | 4 | 2 A | 1.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.5 W | 6 A | SWITCHING | SILICON | R-PSIP-T10 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | SIP-10 | 10 | unknown | EAR99 | ||||||||||||||
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UPA1520BH
Renesas Electronics Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 30 V | 4 | 2 A | 250 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 8 A | SWITCHING | SILICON | R-PSIP-T10 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | IN-LINE, R-PSIP-T10 | 10 | unknown | EAR99 | ||||||||||||||
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UPA1552BH-AZ
Renesas Electronics Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 60 V | 4 | 5 A | 240 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 20 A | SWITCHING | SILICON | R-PSIP-T10 | Not Qualified | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | IN-LINE, R-PSIP-T10 | 10 | unknown | EAR99 | ||||||||||||||
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MP4205
Toshiba America Electronic Components
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Check for Price | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 60 V | 4 | 2 A | 600 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | R-PSIP-T10 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | TOSHIBA CORP | IN-LINE, R-PSIP-T10 | unknown | EAR99 | ||||||||||||||||||||||
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UPA1522H-AZ
NEC Electronics Group
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Check for Price | Transferred | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 60 V | 4 | 2 A | 250 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 8 A | SWITCHING | SILICON | R-PSIP-T10 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | NEC ELECTRONICS CORP | IN-LINE, R-PSIP-T10 | 10 | unknown | EAR99 |