Parametric results for: FDP045N10A-F102 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

ULTRA-LOW RESISTANCE 2

3 hits Apply

637.0 mJ 2

3 hits Apply

Configuration (2)

Single 1 SINGLE WITH BUILT-IN DIODE 2

3 hits Apply

DS Breakdown Voltage-Min (1)

100 V 2

3 hits Apply

Drain Current-Max (Abs) (ID) (1)

120 A 1

3 hits Apply

Drain Current-Max (ID) (1)

120 A 2

3 hits Apply

Drain-source On Resistance-Max (1)

4.5 mΩ 2

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-220AB 2

3 hits Apply

R-PSFM-T3 2

3 hits Apply

e3 1

3 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 1 onsemi 2

3 hits Apply

Number of Elements (1)

1 2

3 hits Apply

Number of Terminals (1)

3 2

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

PLASTIC/EPOXY 2

3 hits Apply

RECTANGULAR 2

3 hits Apply

FLANGE MOUNT 2

3 hits Apply

Active 2 Transferred 1

3 hits Apply

Yes 2

3 hits Apply

NOT SPECIFIED 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

263 W 3

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply