Findchips: Parametric Search Results for FQD2N60CTM


Select Parts		Part Number

		FQD2N60CTM-WS onsemi
		FQD2N60CTM onsemi
		FQD2N60CTM_WS onsemi
		FQD2N60CTM_WS Fairchild Semiconductor Corporation
		FQD2N60CTM Rochester Electronics LLC
		FQD2N60CTM Fairchild Semiconductor Corporation

				Most Relevant								Technical							Compliance			Operating Conditions				Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JEDEC-95 Code	JESD-30 Code	JESD-609 Code	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Part Package Code	Package Description	Manufacturer Package Code	Reach Compliance Code	ECCN Code	Samacsys Manufacturer	Pin Count	HTS Code

$0.4357 Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ONSEMI

TO-252 3L (DPAK)

ROHS COMPLIANT, DPAK-3

369AS

not_compliant

EAR99

onsemi

Check for Price Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

44 W

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

150 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ONSEMI

DPAK-3 / TO-252-3

369AS

not_compliant

EAR99

onsemi

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ON SEMICONDUCTOR

SMALL OUTLINE, R-PSSO-G2

TO252A03

unknown

EAR99

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn)

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

DPAK

ROHS COMPLIANT, DPAK-3

TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

not_compliant

EAR99

8541.29.00.95

Check for Price Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

TO-252

ROHS COMPLIANT, DPAK-3

unknown

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

44 W

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

150 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

DPAK

ROHS COMPLIANT, DPAK-3

TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

not_compliant

EAR99

8541.29.00.95

Compare

FQD2N60CTM-WS

onsemi

$0.4357 Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ONSEMI

TO-252 3L (DPAK)

ROHS COMPLIANT, DPAK-3

369AS

not_compliant

EAR99

onsemi

FQD2N60CTM

onsemi

Check for Price Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

44 W

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

150 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ONSEMI

DPAK-3 / TO-252-3

369AS

not_compliant

EAR99

onsemi

FQD2N60CTM_WS

onsemi

Check for Price Buy

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn) - annealed

GULL WING

SINGLE

ON SEMICONDUCTOR

SMALL OUTLINE, R-PSSO-G2

TO252A03

unknown

EAR99

FQD2N60CTM_WS

Fairchild Semiconductor Corporation

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Matte Tin (Sn)

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

DPAK

ROHS COMPLIANT, DPAK-3

TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

not_compliant

EAR99

8541.29.00.95

FQD2N60CTM

Rochester Electronics LLC

Check for Price Buy

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

ROCHESTER ELECTRONICS LLC

TO-252

ROHS COMPLIANT, DPAK-3

unknown

FQD2N60CTM

Fairchild Semiconductor Corporation

Check for Price Buy

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

600 V

1.9 A

4.7 Ω

120 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

44 W

7.6 A

SWITCHING

SILICON

TO-252

R-PSSO-G2

150 °C

260

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

SINGLE

FAIRCHILD SEMICONDUCTOR CORP

DPAK

ROHS COMPLIANT, DPAK-3

TO252 (D-PAK), MOLDED, 3 LEAD,OPTION AA&AB

not_compliant

EAR99

8541.29.00.95

Parametric results for: FQD2N60CTM under Power Field-Effect Transistors