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Parametric » Transistors » Power Field-Effect Transistors

Parametric results for: FQT7N10TF under Power Field-Effect Transistors

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Select Parts		Part Number

		FQT7N10TF Rochester Electronics LLC
		FQT7N10TF onsemi
		FQT7N10TF Fairchild Semiconductor Corporation

				Most Relevant								Technical							Compliance			Operating Conditions				Physical							Other
Composite Price	Pbfree Code	Rohs Code	Part Life Cycle Code	Polarity/Channel Type	Surface Mount	Configuration	Number of Terminals	DS Breakdown Voltage-Min	Number of Elements	Drain Current-Max (ID)	Drain-source On Resistance-Max	Avalanche Energy Rating (Eas)	FET Technology	Operating Mode	Power Dissipation-Max (Abs)	Pulsed Drain Current-Max (IDM)	Transistor Application	Transistor Element Material	JESD-30 Code	JESD-609 Code	Qualification Status	Moisture Sensitivity Level	Operating Temperature-Max	Peak Reflow Temperature (Cel)	Time@Peak Reflow Temperature-Max (s)	Case Connection	Package Body Material	Package Shape	Package Style	Terminal Finish	Terminal Form	Terminal Position	Ihs Manufacturer	Reach Compliance Code	Part Package Code	Manufacturer Package Code	ECCN Code	Samacsys Manufacturer	Pin Count	HTS Code

Check for Price Buy

Yes

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

100 V

1

1.7 A

350 mΩ

50 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

6.8 A

SWITCHING

SILICON

R-PDSO-G4

e3

COMMERCIAL

1

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

DUAL

ROCHESTER ELECTRONICS LLC

unknown

Check for Price Buy

Yes

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

100 V

1

1.7 A

350 mΩ

50 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2 W

6.8 A

SWITCHING

SILICON

R-PDSO-G4

e3

Not Qualified

1

150 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

DUAL

ONSEMI

not_compliant

SOT-223-4 / TO-261-4

318H-01

EAR99

onsemi

Check for Price Buy

Yes

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

100 V

1

1.7 A

350 mΩ

50 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2 W

6.8 A

SWITCHING

SILICON

R-PDSO-G4

e3

Not Qualified

1

150 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

DUAL

FAIRCHILD SEMICONDUCTOR CORP

not_compliant

SOT-223

MOLDED PACKAGE, SOT-223, 4 LEAD

EAR99

4

8541.29.00.95

Compare

Rochester Electronics LLC

Check for Price Buy

Yes

Yes

Active

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

100 V

1

1.7 A

350 mΩ

50 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

6.8 A

SWITCHING

SILICON

R-PDSO-G4

e3

COMMERCIAL

1

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

DUAL

ROCHESTER ELECTRONICS LLC

unknown

onsemi

Check for Price Buy

Yes

Yes

Obsolete

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

100 V

1

1.7 A

350 mΩ

50 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2 W

6.8 A

SWITCHING

SILICON

R-PDSO-G4

e3

Not Qualified

1

150 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

DUAL

ONSEMI

not_compliant

SOT-223-4 / TO-261-4

318H-01

EAR99

onsemi

Fairchild Semiconductor Corporation

Check for Price Buy

Yes

Yes

Transferred

N-CHANNEL

YES

SINGLE WITH BUILT-IN DIODE

4

100 V

1

1.7 A

350 mΩ

50 mJ

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

2 W

6.8 A

SWITCHING

SILICON

R-PDSO-G4

e3

Not Qualified

1

150 °C

260

30

DRAIN

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

MATTE TIN

GULL WING

DUAL

FAIRCHILD SEMICONDUCTOR CORP

not_compliant

SOT-223

MOLDED PACKAGE, SOT-223, 4 LEAD

EAR99

4

8541.29.00.95