Parametric results for: HUF75332G3 under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

3 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 3

3 hits Apply

DS Breakdown Voltage-Min (1)

55 V 3

3 hits Apply

Drain Current-Max (Abs) (ID) (2)

52 A 2 60 A 1

Min (A) - Max (A)

3 hits Apply

Drain Current-Max (ID) (2)

52 A 2 60 A 1

Min (A) - Max (A)

3 hits Apply

Drain-source On Resistance-Max (1)

19 mΩ 3

3 hits Apply

METAL-OXIDE SEMICONDUCTOR 3

3 hits Apply

TO-247 3

3 hits Apply

R-PSFM-T3 3

3 hits Apply

e0 3

3 hits Apply

Manufacturer (3)

Fairchild Semiconductor Corporation 1 Harris Semiconductor 1 Intersil Corporation 1

3 hits Apply

Number of Elements (1)

1 3

3 hits Apply

Number of Terminals (1)

3 3

3 hits Apply

ENHANCEMENT MODE 3

3 hits Apply

175.0 °C 3

3 hits Apply

PLASTIC/EPOXY 3

3 hits Apply

RECTANGULAR 3

3 hits Apply

FLANGE MOUNT 3

3 hits Apply

Obsolete 2 Transferred 1

3 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 3

3 hits Apply

110 W 2

3 hits Apply

110 W 2 145 W 1

Min (W) - Max (W)

3 hits Apply

Surface Mount (1)

NO 3

3 hits Apply