Parametric results for: JANTXV2N6849 under Power Field-Effect Transistors

All Filters Additional Feature Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation Ambient-Max Power Dissipation-Max (Abs) Surface Mount

AVALANCHE RATED 2 RADIATION HARDENED 5

11 hits Apply

92.0 mJ 3 165.0 mJ 3 500.0 mJ 5

Min (mJ) - Max (mJ)

11 hits Apply

DRAIN 5 SOURCE 3

11 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 11

11 hits Apply

DS Breakdown Voltage-Min (1)

100 V 11

11 hits Apply

Drain Current-Max (ID) (1)

6.5 A 11

11 hits Apply

Drain-source On Resistance-Max (3)

300 mΩ 5 320 mΩ 1 345 mΩ 5

Min (Ω) - Max (Ω)

11 hits Apply

METAL-OXIDE SEMICONDUCTOR 11

11 hits Apply

TO-205AF 8

11 hits Apply

O-MBCY-W3 8 R-CQCC-N15 3

11 hits Apply

e0 4

11 hits Apply

Manufacturer (8)

Defense Logistics Agency 2 Harris Semiconductor 1 Infineon Technologies AG 2 International Rectifier 1 Intersil Corporation 1 Microsemi Corporation (now Microchip) 2 Semicoa Semiconductors 1 Vishay Siliconix 1

11 hits Apply

Number of Elements (1)

1 11

11 hits Apply

Number of Terminals (2)

15 3 3 8

11 hits Apply

ENHANCEMENT MODE 11

11 hits Apply

150.0 °C 4

11 hits Apply

CERAMIC, METAL-SEALED COFIRED 3 METAL 8

11 hits Apply

RECTANGULAR 3 ROUND 8

11 hits Apply

CHIP CARRIER 3 CYLINDRICAL 8

11 hits Apply

Active 4 Contact Manufacturer 1 Obsolete 5 Transferred 1

11 hits Apply

No 2

11 hits Apply

NOT SPECIFIED 3

11 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 11

11 hits Apply

25 W 2

11 hits Apply

25 W 2

11 hits Apply

Surface Mount (2)

NO 8 YES 3

11 hits Apply