Parametric results for: LP2305LT1G under Power Field-Effect Transistors

All Filters Additional Feature Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Peak Reflow Temperature (Cel) Polarity/Channel Type Surface Mount

ULTRA LOW RESISTANCE 1 ULTRA-LOW RESISTANCE 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

30 V 2

2 hits Apply

Drain Current-Max (ID) (1)

4.2 A 2

2 hits Apply

Drain-source On Resistance-Max (1)

70 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

TO-236AB 2

2 hits Apply

R-PDSO-G3 2

2 hits Apply

e3 1

2 hits Apply

Manufacturer (1)

LRC Leshan Radio Co Ltd 2

2 hits Apply

1 2

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

150.0 °C 1

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

SMALL OUTLINE 2

2 hits Apply

Active 2

2 hits Apply

260 1

2 hits Apply

Polarity/Channel Type (1)

P-CHANNEL 2

2 hits Apply

Surface Mount (1)

YES 2

2 hits Apply