Parametric results for: MSC080SMA120B under Power Field-Effect Transistors

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Manufacturer Part Number: msc080sma120b Sorted By: Configuration
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MSC080SMA120B
Microchip Technology Inc
$11.0776 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1.2 kV 1 37 A 100 mΩ 9 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 91 A SWITCHING SILICON CARBIDE TO-247AD R-PSFM-T3 175 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE MICROCHIP TECHNOLOGY INC TO-247, 3 PIN compliant EAR99 8541.29.00.95
MSC080SMA120B4
Microsemi Corporation
Check for Price Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 1.2 kV 1 37 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 90 A SWITCHING SILICON CARBIDE TO-247 R-PSFM-T4 175 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE MICROSEMI CORP unknown EAR99 2019-09-20 Microsemi Corporation
MSC080SMA120B
Microsemi Corporation
$19.6607 Yes Transferred N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1.2 kV 1 37 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 91 A SWITCHING SILICON CARBIDE TO-247AD R-PSFM-T3 175 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE MICROSEMI CORP TO-247, 3 PIN compliant EAR99 2018-06-07 Microsemi Corporation
MSC080SMA120B4
Microchip Technology Inc
$12.5169 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 1.2 kV 1 37 A 100 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 W 90 A SWITCHING SILICON CARBIDE TO-247 R-PSFM-T4 175 °C -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE MICROCHIP TECHNOLOGY INC compliant EAR99 8541.29.00.95 Microchip