Parametric results for: MSC080SMA120B under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code Manufacturer Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

1.2 kV 4

4 hits Apply

Drain Current-Max (Abs) (ID) (1)

37 A 4

4 hits Apply

Drain Current-Max (ID) (1)

37 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

100 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

9 pF 1

4 hits Apply

TO-247 2 TO-247AD 2

4 hits Apply

R-PSFM-T3 2 R-PSFM-T4 2

4 hits Apply

Manufacturer (2)

Microchip Technology Inc 2 Microsemi Corporation 2

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (2)

3 2 4 2

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

175.0 °C 4

4 hits Apply

-55.0 °C 4

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

FLANGE MOUNT 4

4 hits Apply

Active 2 Transferred 2

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

200 W 4

4 hits Apply

Surface Mount (1)

NO 4

4 hits Apply