Parametric results for: NVHL080N120SC1 under Power Field-Effect Transistors

All Filters Avalanche Energy Rating (Eas) Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (Abs) (ID) Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JEDEC-95 Code JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

171.0 mJ 2

2 hits Apply

DRAIN 1

2 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 2

2 hits Apply

DS Breakdown Voltage-Min (1)

1.2 kV 2

2 hits Apply

Drain Current-Max (Abs) (ID) (2)

31 A 1 44 A 1

Min (A) - Max (A)

2 hits Apply

Drain Current-Max (ID) (2)

31 A 1 44 A 1

Min (A) - Max (A)

2 hits Apply

Drain-source On Resistance-Max (1)

110 mΩ 2

2 hits Apply

METAL-OXIDE SEMICONDUCTOR 2

2 hits Apply

6.5 pF 1 10 pF 1

Min (pF) - Max (pF)

2 hits Apply

TO-247 2

2 hits Apply

R-PSFM-T3 2

2 hits Apply

e3 2

2 hits Apply

Manufacturer (1)

onsemi 2

2 hits Apply

1 1

2 hits Apply

Number of Elements (1)

1 2

2 hits Apply

Number of Terminals (1)

3 2

2 hits Apply

ENHANCEMENT MODE 2

2 hits Apply

175.0 °C 2

2 hits Apply

-55.0 °C 2

2 hits Apply

PLASTIC/EPOXY 2

2 hits Apply

RECTANGULAR 2

2 hits Apply

FLANGE MOUNT 2

2 hits Apply

Active 1 Not Recommended 1

2 hits Apply

Yes 2

2 hits Apply

260 1 NOT SPECIFIED 1

2 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 2

2 hits Apply

178 W 1 348 W 1

Min (W) - Max (W)

2 hits Apply

Surface Mount (1)

NO 2

2 hits Apply