Parametric results for: NVHL080N120SC1 under Power Field-Effect Transistors

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Part Number Composite Price
Pbfree Code
Rohs Code
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Polarity/Channel Type Surface Mount
Configuration Number of Terminals
DS Breakdown Voltage-Min
Number of Elements Drain Current-Max (Abs) (ID)
Drain Current-Max (ID)
Drain-source On Resistance-Max
Additional Feature
Avalanche Energy Rating (Eas)
Feedback Cap-Max (Crss)
FET Technology Operating Mode
Power Dissipation Ambient-Max
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
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Transistor Element Material
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
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Operating Temperature-Max
Operating Temperature-Min
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
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Package Style
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Terminal Position
Ihs Manufacturer
Reach Compliance Code
ECCN Code
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Manufacturer Package Code
Part Package Code
Pin Count
HTS Code
BSS138
Calogic Inc
Check for Price No Transferred N-CHANNEL YES Single 200 mA METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW e0 150 °C Tin/Lead (Sn/Pb) CALOGIC LLC unknown EAR99
BSS138
Philips Semiconductors
Check for Price No Transferred N-CHANNEL YES Single 200 mA METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW e0 150 °C Tin/Lead (Sn/Pb) PHILIPS SEMICONDUCTORS unknown EAR99 ,
BSS138
Sipex Corporation
Check for Price No Obsolete N-CHANNEL YES SINGLE 1 200 mA 200 mA METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW e0 1 150 °C 240 TIN LEAD SIPEX CORP unknown EAR99
BSS138
North American Philips Discrete Products Div
Check for Price No Transferred N-CHANNEL YES Single 200 mA METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW e0 150 °C Tin/Lead (Sn/Pb) NORTH AMERICAN PHILIPS DISCRETE PRODUCTS DIV unknown EAR99 ,
FDN5618P
onsemi
$0.3174 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 1.25 A 1.25 A 170 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW 10 A SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ON SEMICONDUCTOR compliant EAR99 SMALL OUTLINE, R-PDSO-G3 FDN5618P 527AG
FDN5618P
Rochester Electronics LLC
Check for Price Yes Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 1.25 A 170 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 10 A SWITCHING SILICON R-PDSO-G3 e3 COMMERCIAL 1 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ROCHESTER ELECTRONICS LLC unknown SUPERSOT-3 SUPERSOT SOT 3
IRLML6402TRPBF
Infineon Technologies AG
$0.2667 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 20 V 1 3.7 A 3.7 A 65 mΩ ULTRA LOW RESISTANCE 11 mJ 110 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W 1.3 W 22 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 SMALL OUTLINE, R-PDSO-G3 IRLML6402TRPBF 8541.29.00.95
IRLML6401TRPBF
Infineon Technologies AG
$0.2537 Yes Active P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 12 V 1 4.3 A 4.3 A 50 mΩ ULTRA LOW RESISTANCE 33 mJ 125 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.3 W 1.3 W 34 A SWITCHING SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL INFINEON TECHNOLOGIES AG compliant EAR99 SMALL OUTLINE, R-PDSO-G3 IRLML6401TRPBF
FDN5618P
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred P-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 60 V 1 1.25 A 1.25 A 170 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 500 mW 10 A SWITCHING SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP compliant EAR99 SMALL OUTLINE, R-PDSO-G3 FDN5618P MOLDED PACKAGE, SUPERSOT, 3 LEAD SSOT 3 8541.21.00.95
BSS123
Philips Semiconductors
Check for Price Yes Transferred N-CHANNEL YES SINGLE 1 170 mA 170 mA METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 360 mW e3 1 150 °C 260 MATTE TIN PHILIPS SEMICONDUCTORS unknown EAR99 ,