Parametric results for: NVHL080N120SC1A under Power Field-Effect Transistors

Filter Your Search
|
Manufacturer Part Number: nvhl080n120sc1a

1 - 1 of 1 results

Selected entries:
Compare
Most Relevant Technical Compliance Operating Conditions Physical Other
Part Number Composite Price
Pbfree Code
Part Life Cycle Code
Polarity/Channel Type Surface Mount
Configuration Number of Terminals
DS Breakdown Voltage-Min
Number of Elements Drain Current-Max (Abs) (ID)
Drain Current-Max (ID)
Drain-source On Resistance-Max
Avalanche Energy Rating (Eas)
Feedback Cap-Max (Crss)
FET Technology Operating Mode
Power Dissipation-Max (Abs)
Pulsed Drain Current-Max (IDM)
Transistor Application
Transistor Element Material
JEDEC-95 Code
JESD-30 Code
JESD-609 Code
Reference Standard
Moisture Sensitivity Level
Operating Temperature-Max
Operating Temperature-Min
Peak Reflow Temperature (Cel)
Time@Peak Reflow Temperature-Max (s)
Package Body Material
Package Shape
Package Style
Terminal Finish
Terminal Form
Terminal Position
Source Content uid
Ihs Manufacturer
Package Description
Manufacturer Package Code
Reach Compliance Code
Date Of Intro
NVHL080N120SC1A
onsemi
$17.1311 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 1.2 kV 1 31 A 31 A 110 mΩ 171 mJ 6.5 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 178 W 132 A SWITCHING SILICON CARBIDE TO-247 R-PSFM-T3 e3 AEC-Q101 1 175 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE NVHL080N120SC1A ON SEMICONDUCTOR FLANGE MOUNT, R-PSFM-T3 340CX compliant 2020-04-22