Parametric results for: SCT2080KE under Power Field-Effect Transistors

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Sorted By: Polarity/Channel Type
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SL01N65-TP
Micro Commercial Components
Check for Price Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 3 650 V 1 1 A 11 Ω 0.8 pF METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 1.6 W 4 A SILICON R-PDSO-G3 150 °C -55 °C PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL MICRO COMMERCIAL COMPONENTS CORP unknown EAR99
PSMN015-60BS
NXP Semiconductors
Check for Price Yes Transferred N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 50 A 14.8 mΩ 44 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 86 W 201 A SWITCHING SILICON R-PSSO-G2 e3 1 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING SINGLE NXP SEMICONDUCTORS unknown EAR99 SMALL OUTLINE, R-PSSO-G2 3
AUIRFSL3107
Infineon Technologies AG
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 75 V 1 195 A 3 mΩ AVALANCHE RATED, HIGH RELIABILITY, ULTRA-LOW RESISTANCE 300 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 370 W 900 A SWITCHING SILICON TO-262AA R-PSIP-T3 e3 1 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR IN-LINE MATTE TIN OVER NICKEL THROUGH-HOLE SINGLE INFINEON TECHNOLOGIES AG compliant EAR99 IN-LINE, R-PSIP-T3
UPA2721GR-E1-A
Renesas Electronics Corporation
Check for Price Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 30 V 1 19 A 6.3 mΩ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 2.5 W 150 A SWITCHING SILICON R-PDSO-G8 Not Qualified 150 °C NOT SPECIFIED NOT SPECIFIED PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING DUAL RENESAS ELECTRONICS CORP compliant EAR99 SMALL OUTLINE, R-PDSO-G8 8 SOT
2SK1808
Renesas Electronics Corporation
Check for Price No No Not Recommended N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 900 V 1 4 A 4 Ω METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 35 W 10 A SWITCHING SILICON TO-220AB R-PSFM-T3 e0 Not Qualified 150 °C ISOLATED PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN LEAD THROUGH-HOLE SINGLE RENESAS ELECTRONICS CORP unknown EAR99 TO-220FM, 3 PIN 3 TO-220AB 1996-11-01
IRHM3064
Infineon Technologies AG
Check for Price No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 60 V 1 35 A 21 mΩ 500 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 250 W 140 A SWITCHING SILICON TO-254AA S-CSFM-P3 e0 Not Qualified 150 °C CERAMIC, METAL-SEALED COFIRED SQUARE FLANGE MOUNT TIN LEAD PIN/PEG SINGLE INFINEON TECHNOLOGIES AG not_compliant EAR99 FLANGE MOUNT, S-CSFM-P3
JANSH2N7484T3
Infineon Technologies AG
Check for Price No Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 18 A 70 mΩ 87 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 75 W 72 A SWITCHING SILICON TO-257AA S-XSFM-P3 e0 Qualified 150 °C ISOLATED UNSPECIFIED SQUARE FLANGE MOUNT TIN LEAD PIN/PEG SINGLE INFINEON TECHNOLOGIES AG not_compliant 3A001.A.1.A FLANGE MOUNT, S-XSFM-P3
PSMN004-55W,127
NXP Semiconductors
Check for Price Yes Obsolete N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 55 V 1 100 A 5 mΩ LOGIC LEVEL COMPATIBLE 357 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 300 W 300 A SWITCHING SILICON TO-247 R-PSFM-T3 e3 Not Qualified 175 °C DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT MATTE TIN THROUGH-HOLE SINGLE NXP SEMICONDUCTORS compliant EAR99 PLASTIC PACKAGE-3 3 TO-247 SOT429
TK14N65W
Toshiba America Electronic Components
Check for Price Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 650 V 1 13.7 A 250 mΩ 231 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 54.8 A SWITCHING SILICON TO-247 R-PSFM-T3 NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT THROUGH-HOLE SINGLE TOSHIBA CORP unknown EAR99 SC-65, 3 PIN
SGSP471
STMicroelectronics
Check for Price No No Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 3 100 V 1 30 A 75 mΩ FAST SWITCHING METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 150 W 120 A SWITCHING SILICON TO-218 R-PSFM-T3 e0 Not Qualified 150 °C PLASTIC/EPOXY RECTANGULAR FLANGE MOUNT TIN LEAD THROUGH-HOLE SINGLE STMICROELECTRONICS not_compliant EAR99 FLANGE MOUNT, R-PSFM-T3