1 - 10 of 180,411 results sorted by Configuration
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Part Number |
Composite Price
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Pbfree Code
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Rohs Code
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Part Life Cycle Code
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Polarity/Channel Type |
Surface Mount
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Configuration |
Number of Terminals
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DS Breakdown Voltage-Min
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Number of Elements |
Drain Current-Max (Abs) (ID)
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Drain Current-Max (ID)
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Drain-source On Resistance-Max
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Additional Feature
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Avalanche Energy Rating (Eas)
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FET Technology |
Operating Mode
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Power Dissipation-Max (Abs)
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Pulsed Drain Current-Max (IDM)
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Transistor Application
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Transistor Element Material
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JESD-30 Code
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JESD-609 Code
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Qualification Status
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Reference Standard
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Moisture Sensitivity Level
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Operating Temperature-Max
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Operating Temperature-Min
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Peak Reflow Temperature (Cel)
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Time@Peak Reflow Temperature-Max (s)
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Case Connection
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Package Body Material
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Package Shape
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Package Style
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Terminal Finish
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Terminal Form
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Terminal Position
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Ihs Manufacturer
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Part Package Code
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Package Description
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Pin Count
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Reach Compliance Code
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ECCN Code
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Source Content uid
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Manufacturer Package Code
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HTS Code
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SCP-3623S
Sensitron Semiconductors
|
Check for Price | No | No | Active | N-CHANNEL | NO | 2 BANKS, BRIDGE WITH BUILT-IN DIODE | 12 | 100 V | 4 | 40 A | 30 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-XDFM-P12 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | RECTANGULAR | FLANGE MOUNT | PIN/PEG | DUAL | SENSITRON SEMICONDUCTOR | MODULE | POWER MODULE-12 | 12 | compliant | EAR99 | |||||||||||||||||
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SCP-3623
Sensitron Semiconductors
|
Check for Price | No | No | Active | N-CHANNEL | NO | 2 BANKS, BRIDGE WITH BUILT-IN DIODE | 12 | 100 V | 4 | 40 A | 30 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SWITCHING | SILICON | R-XDFM-P12 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | RECTANGULAR | FLANGE MOUNT | PIN/PEG | DUAL | SENSITRON SEMICONDUCTOR | MODULE | POWER MODULE-12 | 12 | compliant | EAR99 | |||||||||||||||||
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DMHC10H170SFJ-13
Diodes Incorporated
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$0.9195 | Yes | Active | N-CHANNEL AND P-CHANNEL | YES | 2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 12 | 100 V | 2 | 2.9 A | 2.9 A | 300 mΩ | HIGH RELIABILITY | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 2.1 W | 13 A | SWITCHING | SILICON | R-PDSO-N12 | e3 | AEC-Q101 | 150 °C | -55 °C | 260 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | NO LEAD | DUAL | DIODES INC | V-DFN5045-12, 12 PIN | compliant | EAR99 | ||||||||||||
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FDMQ8203
onsemi
|
$1.4028 | Yes | Active | N-CHANNEL AND P-CHANNEL | YES | 2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 12 | 100 V | 4 | 6 A | 3.4 A | 110 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 W | 12 A | SWITCHING | SILICON | R-PDSO-N12 | e4 | 1 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | NO LEAD | DUAL | ON SEMICONDUCTOR | SMALL OUTLINE, R-PDSO-N12 | compliant | EAR99 | FDMQ8203 | 511CS | |||||||||||
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FDMQ8203
Fairchild Semiconductor Corporation
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Check for Price | Yes | Yes | Transferred | N-CHANNEL AND P-CHANNEL | YES | 2 BANKS, COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE | 12 | 100 V | 4 | 6 A | 3.4 A | 110 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 37 W | 12 A | SWITCHING | SILICON | R-PDSO-N12 | e4 | 1 | 150 °C | 260 | 30 | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NICKEL PALLADIUM GOLD | NO LEAD | DUAL | FAIRCHILD SEMICONDUCTOR CORP | MLP | 5 X 4.50 MM, ROHS COMPLIANT, MLP, 12 PIN | 12 | unknown | EAR99 | FDMQ8203 | 12LD MLP, DUAL, NON-JEDEC, 4.5 X 5.0MM. | 8541.29.00.95 | |||||||
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UPA1572BH-AZ
Renesas Electronics Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 60 V | 4 | 2 A | 2 A | 800 mΩ | 0.1 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 20 W | 6 A | SWITCHING | SILICON | R-PSIP-T10 | Not Qualified | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | IN-LINE, R-PSIP-T10 | 10 | unknown | EAR99 | UPA1572BH-AZ | |||||||||||||
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UPA1522H-AZ
NEC Electronics Group
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Check for Price | Transferred | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 60 V | 4 | 2 A | 250 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 8 A | SWITCHING | SILICON | R-PSIP-T10 | Not Qualified | NOT SPECIFIED | NOT SPECIFIED | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | NEC ELECTRONICS CORP | IN-LINE, R-PSIP-T10 | 10 | unknown | EAR99 | |||||||||||||||||||
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UPA1552BH-AZ
Renesas Electronics Corporation
|
Check for Price | Yes | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 60 V | 4 | 5 A | 5 A | 240 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 20 A | SWITCHING | SILICON | R-PSIP-T10 | Not Qualified | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | IN-LINE, R-PSIP-T10 | 10 | unknown | EAR99 | UPA1552BH-AZ | ||||||||||||||
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UPA1520BH
Renesas Electronics Corporation
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Check for Price | No | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 30 V | 4 | 2 A | 2 A | 250 mΩ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 28 W | 8 A | SWITCHING | SILICON | R-PSIP-T10 | e0 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | TIN LEAD | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | IN-LINE, R-PSIP-T10 | 10 | unknown | EAR99 | UPA1520BH | ||||||||||||||
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UPA1576H-AZ
Renesas Electronics Corporation
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Check for Price | Yes | Obsolete | N-CHANNEL | NO | 2 BANKS, COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE | 10 | 100 V | 4 | 2 A | 2 A | 1.5 Ω | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 3.5 W | 6 A | SWITCHING | SILICON | R-PSIP-T10 | Not Qualified | 150 °C | 260 | 10 | PLASTIC/EPOXY | RECTANGULAR | IN-LINE | THROUGH-HOLE | SINGLE | RENESAS ELECTRONICS CORP | IN-LINE, R-PSIP-T10 | 10 | unknown | EAR99 | UPA1576H-AZ |