Parametric results for: SI7212DN-T1-GE3 under Power Field-Effect Transistors

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Sorted By: FET Technology
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ISL70023SEHML
Renesas Electronics Corporation
Check for Price Buy Yes Active N-CHANNEL YES SINGLE 4 100 V 1 60 A 12 mΩ HIGH RELIABILITY 18 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING SILICON R-XBCC-N4 e4 MIL-38535 125 °C -55 °C DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC , 4 J4.A compliant EAR99 Renesas Electronics
ISL73023SEHX/SAMPLE
Renesas Electronics Corporation
Check for Price Buy No Active N-CHANNEL YES SINGLE 30 100 V 1 60 A 12 mΩ HIGH RELIABILITY 18 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING SILICON R-XBCC-N30 MIL-38535 125 °C -55 °C NOT SPECIFIED NOT SPECIFIED UNSPECIFIED RECTANGULAR CHIP CARRIER NO LEAD BOTTOM RENESAS ELECTRONICS CORP PFL ISLDUMMY00 compliant EAR99 Renesas Electronics
GS66502B-E01-MR
GaN Systems
Check for Price Buy Yes Obsolete N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
EPC2035
Efficient Power Conversion
Check for Price Buy Yes Contact Manufacturer N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 60 V 1 1.7 A 45 mΩ ULTRA LOW RESISTANCE HIGH ELECTRON MOBILITY ENHANCEMENT MODE 24 A SWITCHING GALLIUM NITRIDE S-XXUC-X4 150 °C -40 °C NOT SPECIFIED NOT SPECIFIED UNSPECIFIED SQUARE UNCASED CHIP UNSPECIFIED UNSPECIFIED EFFICIENT POWER CONVERSION CORP DIE-4 compliant EAR99
GNE1040TB
ROHM Semiconductor
Check for Price Buy Yes Active N-CHANNEL YES SINGLE 8 150 V 1 30 A HIGH ELECTRON MOBILITY ENHANCEMENT MODE 60 A SWITCHING GALLIUM NITRIDE R-PDSO-N8 150 °C NOT SPECIFIED NOT SPECIFIED SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE NO LEAD DUAL ROHM CO LTD compliant EAR99 ROHM Semiconductor
ISL73023SEHML
Renesas Electronics Corporation
Check for Price Buy Yes Active N-CHANNEL YES SINGLE 4 100 V 1 60 A 12 mΩ HIGH RELIABILITY 18 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE SWITCHING SILICON R-XBCC-N4 e4 MIL-38535 125 °C -55 °C DRAIN SOURCE UNSPECIFIED RECTANGULAR CHIP CARRIER Gold (Au) NO LEAD BOTTOM RENESAS ELECTRONICS CORP CLCC , 4 J4.A compliant EAR99 Renesas Electronics
EPC2218
Efficient Power Conversion
Check for Price Buy Yes Contact Manufacturer N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 8 100 V 1 60 A 3.2 mΩ 4.3 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 231 A SWITCHING GALLIUM NITRIDE R-XUUC-N8 1 150 °C -40 °C UNSPECIFIED RECTANGULAR UNCASED CHIP NO LEAD UPPER EFFICIENT POWER CONVERSION CORP DIE-8 compliant EAR99
GS-065-011-1-L-MR
GaN Systems
Check for Price Buy Yes Contact Manufacturer N-CHANNEL YES SINGLE 8 650 V 1 11 A 190 mΩ 0.4 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 19 A SWITCHING GALLIUM NITRIDE R-PDSO-N8 3 150 °C -55 °C 260 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE NO LEAD DUAL GAN SYSTEMS INC compliant EAR99 GaN Systems
GS66502B-TR
GaN Systems
Check for Price Buy Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems
GS66502B-MR
GaN Systems
Check for Price Buy Yes Contact Manufacturer N-CHANNEL YES SINGLE 3 650 V 1 7.5 A 260 mΩ 0.5 pF HIGH ELECTRON MOBILITY ENHANCEMENT MODE 15 A SWITCHING GALLIUM NITRIDE R-PBCC-N3 e4 3 150 °C -55 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR CHIP CARRIER GOLD OVER NICKEL NO LEAD BOTTOM GAN SYSTEMS INC unknown EAR99 GaN Systems