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ISL70023SEHML
Renesas Electronics Corporation
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Check for Price Buy | Yes | Active | N-CHANNEL | YES | SINGLE | 4 | 100 V | 1 | 60 A | 12 mΩ | HIGH RELIABILITY | 18 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | SWITCHING | SILICON | R-XBCC-N4 | e4 | MIL-38535 | 125 °C | -55 °C | DRAIN SOURCE | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Gold (Au) | NO LEAD | BOTTOM | RENESAS ELECTRONICS CORP | CLCC | , | 4 | J4.A | compliant | EAR99 | Renesas Electronics | |||||||
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ISL73023SEHX/SAMPLE
Renesas Electronics Corporation
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Check for Price Buy | No | Active | N-CHANNEL | YES | SINGLE | 30 | 100 V | 1 | 60 A | 12 mΩ | HIGH RELIABILITY | 18 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | SWITCHING | SILICON | R-XBCC-N30 | MIL-38535 | 125 °C | -55 °C | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | NO LEAD | BOTTOM | RENESAS ELECTRONICS CORP | PFL | ISLDUMMY00 | compliant | EAR99 | Renesas Electronics | ||||||||||
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GS66502B-E01-MR
GaN Systems
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Check for Price Buy | Yes | Obsolete | N-CHANNEL | YES | SINGLE | 3 | 650 V | 1 | 7.5 A | 260 mΩ | 0.5 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 15 A | SWITCHING | GALLIUM NITRIDE | R-PBCC-N3 | e4 | 3 | 150 °C | -55 °C | 260 | 30 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | GOLD OVER NICKEL | NO LEAD | BOTTOM | GAN SYSTEMS INC | unknown | EAR99 | GaN Systems | |||||||||
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EPC2035
Efficient Power Conversion
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Check for Price Buy | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 60 V | 1 | 1.7 A | 45 mΩ | ULTRA LOW RESISTANCE | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 24 A | SWITCHING | GALLIUM NITRIDE | S-XXUC-X4 | 150 °C | -40 °C | NOT SPECIFIED | NOT SPECIFIED | UNSPECIFIED | SQUARE | UNCASED CHIP | UNSPECIFIED | UNSPECIFIED | EFFICIENT POWER CONVERSION CORP | DIE-4 | compliant | EAR99 | |||||||||||||
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GNE1040TB
ROHM Semiconductor
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Check for Price Buy | Yes | Active | N-CHANNEL | YES | SINGLE | 8 | 150 V | 1 | 30 A | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 60 A | SWITCHING | GALLIUM NITRIDE | R-PDSO-N8 | 150 °C | NOT SPECIFIED | NOT SPECIFIED | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | ROHM CO LTD | compliant | EAR99 | ROHM Semiconductor | |||||||||||||||
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ISL73023SEHML
Renesas Electronics Corporation
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Check for Price Buy | Yes | Active | N-CHANNEL | YES | SINGLE | 4 | 100 V | 1 | 60 A | 12 mΩ | HIGH RELIABILITY | 18 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | SWITCHING | SILICON | R-XBCC-N4 | e4 | MIL-38535 | 125 °C | -55 °C | DRAIN SOURCE | UNSPECIFIED | RECTANGULAR | CHIP CARRIER | Gold (Au) | NO LEAD | BOTTOM | RENESAS ELECTRONICS CORP | CLCC | , | 4 | J4.A | compliant | EAR99 | Renesas Electronics | |||||||
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EPC2218
Efficient Power Conversion
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Check for Price Buy | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 8 | 100 V | 1 | 60 A | 3.2 mΩ | 4.3 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 231 A | SWITCHING | GALLIUM NITRIDE | R-XUUC-N8 | 1 | 150 °C | -40 °C | UNSPECIFIED | RECTANGULAR | UNCASED CHIP | NO LEAD | UPPER | EFFICIENT POWER CONVERSION CORP | DIE-8 | compliant | EAR99 | ||||||||||||||
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GS-065-011-1-L-MR
GaN Systems
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Check for Price Buy | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 8 | 650 V | 1 | 11 A | 190 mΩ | 0.4 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 19 A | SWITCHING | GALLIUM NITRIDE | R-PDSO-N8 | 3 | 150 °C | -55 °C | 260 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | NO LEAD | DUAL | GAN SYSTEMS INC | compliant | EAR99 | GaN Systems | ||||||||||||
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GS66502B-TR
GaN Systems
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Check for Price Buy | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 3 | 650 V | 1 | 7.5 A | 260 mΩ | 0.5 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 15 A | SWITCHING | GALLIUM NITRIDE | R-PBCC-N3 | e4 | 3 | 150 °C | -55 °C | 260 | 30 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | GOLD OVER NICKEL | NO LEAD | BOTTOM | GAN SYSTEMS INC | unknown | EAR99 | GaN Systems | |||||||||
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GS66502B-MR
GaN Systems
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Check for Price Buy | Yes | Contact Manufacturer | N-CHANNEL | YES | SINGLE | 3 | 650 V | 1 | 7.5 A | 260 mΩ | 0.5 pF | HIGH ELECTRON MOBILITY | ENHANCEMENT MODE | 15 A | SWITCHING | GALLIUM NITRIDE | R-PBCC-N3 | e4 | 3 | 150 °C | -55 °C | 260 | 30 | SOURCE | PLASTIC/EPOXY | RECTANGULAR | CHIP CARRIER | GOLD OVER NICKEL | NO LEAD | BOTTOM | GAN SYSTEMS INC | unknown | EAR99 | GaN Systems |