Parametric results for: STD10NM60N under Power Field-Effect Transistors

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Manufacturer Part Number: std10nm60n

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STD10NM60N
STMicroelectronics
$1.7529 Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 8 A 8 A 550 mΩ 200 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 70 W 32 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE STD10NM60N STMICROELECTRONICS TO-252 SMALL OUTLINE, R-PSSO-G2 3 not_compliant EAR99
STD10NM60ND
STMicroelectronics
$1.7044 Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 600 V 1 8 A 8 A 600 mΩ 130 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 70 W 32 A SWITCHING SILICON TO-252 R-PSSO-G2 e3 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING SINGLE STD10NM60ND STMICROELECTRONICS TO-252 SMALL OUTLINE, R-PSSO-G2 3 not_compliant EAR99