Parametric results for: ZXMN4A06GTA under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology Feedback Cap-Max (Crss) JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Operating Temperature-Min Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 4

4 hits Apply

Configuration (1)

SINGLE WITH BUILT-IN DIODE 4

4 hits Apply

DS Breakdown Voltage-Min (1)

40 V 4

4 hits Apply

Drain Current-Max (ID) (1)

5 A 4

4 hits Apply

Drain-source On Resistance-Max (1)

50 mΩ 4

4 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

4 hits Apply

61 pF 1

4 hits Apply

R-PDSO-G4 4

4 hits Apply

e3 4

4 hits Apply

Manufacturer (2)

Diodes Incorporated 2 Zetex / Diodes Inc 2

4 hits Apply

1 4

4 hits Apply

Number of Elements (1)

1 4

4 hits Apply

Number of Terminals (1)

4 4

4 hits Apply

ENHANCEMENT MODE 4

4 hits Apply

150.0 °C 3

4 hits Apply

-55.0 °C 1

4 hits Apply

PLASTIC/EPOXY 4

4 hits Apply

RECTANGULAR 4

4 hits Apply

SMALL OUTLINE 4

4 hits Apply

Active 1 Obsolete 1 Transferred 2

4 hits Apply

No 1

4 hits Apply

260 4

4 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

4 hits Apply

2 W 1 3.9 W 1

Min (W) - Max (W)

4 hits Apply

Surface Mount (1)

YES 4

4 hits Apply