Parametric results for: fdc796n under Power Field-Effect Transistors

All Filters Case Connection Configuration DS Breakdown Voltage-Min Drain Current-Max (ID) Drain-source On Resistance-Max FET Technology JESD-30 Code JESD-609 Code Manufacturer Moisture Sensitivity Level Number of Elements Number of Terminals Operating Mode Operating Temperature-Max Package Body Material Package Shape Package Style Part Life Cycle Code Pbfree Code Peak Reflow Temperature (Cel) Polarity/Channel Type Power Dissipation-Max (Abs) Surface Mount

DRAIN 3

5 hits Apply

Configuration (2)

SINGLE 1 SINGLE WITH BUILT-IN DIODE 3

5 hits Apply

DS Breakdown Voltage-Min (1)

30 V 3

5 hits Apply

Drain Current-Max (ID) (1)

12.5 A 4

5 hits Apply

Drain-source On Resistance-Max (1)

9 mΩ 3

5 hits Apply

METAL-OXIDE SEMICONDUCTOR 4

5 hits Apply

R-PDSO-F6 3

5 hits Apply

e4 3

5 hits Apply

Manufacturer (2)

Fairchild Semiconductor Corporation 4 Rochester Electronics LLC 1

5 hits Apply

1 2

5 hits Apply

Number of Elements (1)

1 4

5 hits Apply

Number of Terminals (1)

6 3

5 hits Apply

ENHANCEMENT MODE 4

5 hits Apply

150.0 °C 2

5 hits Apply

PLASTIC/EPOXY 3

5 hits Apply

RECTANGULAR 3

5 hits Apply

SMALL OUTLINE 3

5 hits Apply

Active 1 Obsolete 4

5 hits Apply

Yes 1

5 hits Apply

260 2

5 hits Apply

Polarity/Channel Type (1)

N-CHANNEL 4

5 hits Apply

1.8 W 1 2 W 1

Min (W) - Max (W)

5 hits Apply

Surface Mount (1)

YES 4

5 hits Apply