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IPD50N06S4L12ATMA2
Infineon Technologies AG
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$0.6074 Buy | Yes | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 50 A | 12 mΩ | 33 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 A | SILICON | TO-252 | R-PSSO-G2 | e3 | AEC-Q101 | 1 | -55 °C | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | TO-252-3-11, 3/2 PIN | not_compliant | EAR99 | Infineon | |||||||||
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IPD50N06S4L12ATMA1
Infineon Technologies AG
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Check for Price Buy | Yes | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 50 A | 12 mΩ | 33 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 200 A | SILICON | TO-252 | R-PSSO-G2 | AEC-Q101 | NOT SPECIFIED | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-3/2 | compliant | EAR99 | Infineon | ||||||||||||
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IPD50N06S4L-12
Infineon Technologies AG
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Check for Price Buy | No | Yes | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 2 | 60 V | 1 | 50 A | 12 mΩ | 33 mJ | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | 50 W | 200 A | SILICON | TO-252 | R-PSSO-G2 | e3 | Not Qualified | 1 | 175 °C | 260 | NOT SPECIFIED | DRAIN | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | Tin (Sn) | GULL WING | SINGLE | INFINEON TECHNOLOGIES AG | GREEN, PLASTIC PACKAGE-3 | not_compliant | EAR99 | Infineon | TO-252 | 4 |