Parametric results for: ipd50n06s4l-12 under Power Field-Effect Transistors

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Manufacturer Part Number: ipd50n06s4l12
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IPD50N06S4L12ATMA2
Infineon Technologies AG
$0.6074 Buy Yes Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 50 A 12 mΩ 33 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 A SILICON TO-252 R-PSSO-G2 e3 AEC-Q101 1 -55 °C DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE INFINEON TECHNOLOGIES AG TO-252-3-11, 3/2 PIN not_compliant EAR99 Infineon
IPD50N06S4L12ATMA1
Infineon Technologies AG
Check for Price Buy Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 50 A 12 mΩ 33 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 200 A SILICON TO-252 R-PSSO-G2 AEC-Q101 NOT SPECIFIED NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE GULL WING SINGLE INFINEON TECHNOLOGIES AG GREEN, PLASTIC PACKAGE-3/2 compliant EAR99 Infineon
IPD50N06S4L-12
Infineon Technologies AG
Check for Price Buy No Yes Active N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 2 60 V 1 50 A 12 mΩ 33 mJ METAL-OXIDE SEMICONDUCTOR ENHANCEMENT MODE 50 W 200 A SILICON TO-252 R-PSSO-G2 e3 Not Qualified 1 175 °C 260 NOT SPECIFIED DRAIN PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING SINGLE INFINEON TECHNOLOGIES AG GREEN, PLASTIC PACKAGE-3 not_compliant EAR99 Infineon TO-252 4