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BF988
NXP Semiconductors
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE WITH BUILT-IN DIODE | 4 | 12 V | ULTRA HIGH FREQUENCY BAND | 1 | 30 mA | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | AMPLIFIER | SILICON | O-PRDB-F4 | Not Qualified | 150 °C | PLASTIC/EPOXY | ROUND | DISK BUTTON | FLAT | RADIAL | NXP SEMICONDUCTORS | unknown | EAR99 | |||||||||||||||||||||
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3SK230-U1A
NEC Electronics Group
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE | 4 | VERY HIGH FREQUENCY BAND | 1 | 16.5 dB | 25 mA | LOW NOISE | 0.03 pF | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, ENHANCEMENT MODE | AMPLIFIER | SILICON | R-PDSO-G4 | e0 | Not Qualified | 125 °C | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | NEC ELECTRONICS CORP | compliant | EAR99 | SC-61 | SMALL OUTLINE, R-PDSO-G4 | 4 | ||||||||||||
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3SK160YTE85R
Toshiba America Electronic Components
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Check for Price | Obsolete | N-CHANNEL | YES | SINGLE | 4 | 13.5 V | VERY HIGH FREQUENCY BAND | 1 | 14.5 dB | 30 mA | 0.05 pF | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, ENHANCEMENT MODE | AMPLIFIER | SILICON | R-PDSO-G4 | Not Qualified | 125 °C | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G4 | |||||||||||||||||
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2SK360IGF01
Hitachi Ltd
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Check for Price | Transferred | N-CHANNEL | YES | SINGLE | 3 | VERY HIGH FREQUENCY BAND | 1 | 30 mA | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | AMPLIFIER | SILICON | R-PDSO-G3 | Not Qualified | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | HITACHI LTD | unknown | EAR99 | SMALL OUTLINE, R-PDSO-G3 | 3 | |||||||||||||||||||||
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TA4007F-BL
Toshiba America Electronic Components
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Check for Price | Active | N-CHANNEL | YES | SINGLE WITH BUILT-IN RESISTOR | 5 | VERY HIGH FREQUENCY BAND | 1 | 24 dB | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | 250 mW | AMPLIFIER | SILICON | R-PDSO-G5 | Not Qualified | 85 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | GULL WING | DUAL | TOSHIBA CORP | unknown | EAR99 | SSOP | SMALL OUTLINE, R-PDSO-G5 | 5 | 8541.21.00.95 | |||||||||||||||||
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BF1005SW
Infineon Technologies AG
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Check for Price | Active | N-CHANNEL | YES | SINGLE | 4 | 12 V | ULTRA HIGH FREQUENCY BAND | 1 | 20 dB | 25 mA | LOW NOISE | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, DEPLETION MODE | 200 mW | SILICON | R-PDSO-G4 | e3 | Not Qualified | 150 °C | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | MATTE TIN | GULL WING | DUAL | INFINEON TECHNOLOGIES AG | compliant | EAR99 | SC-82 | SMALL OUTLINE, R-PDSO-G4 | 4 | |||||||||||||
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BLF888ES
NXP Semiconductors
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Check for Price | Yes | Transferred | N-CHANNEL | YES | COMMON SOURCE, 2 ELEMENTS | 4 | 104 V | ULTRA HIGH FREQUENCY BAND | 2 | 15.3 dB | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | AMPLIFIER | SILICON | R-CDFP-F4 | IEC-60134 | NOT SPECIFIED | NOT SPECIFIED | SOURCE | CERAMIC, METAL-SEALED COFIRED | RECTANGULAR | FLATPACK | FLAT | DUAL | NXP SEMICONDUCTORS | unknown | EAR99 | FLATPACK, R-CDFP-F4 | 2016-04-20 | ||||||||||||||||
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3SK126YTE85R
Toshiba America Electronic Components
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Check for Price | No | Obsolete | N-CHANNEL | YES | SINGLE | 4 | 15 V | VERY HIGH FREQUENCY BAND | 1 | 20 dB | 30 mA | 0.05 pF | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, ENHANCEMENT MODE | AMPLIFIER | SILICON | R-PDSO-G4 | e0 | Not Qualified | 125 °C | 240 | NOT SPECIFIED | SOURCE | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN LEAD | GULL WING | DUAL | TOSHIBA AMERICA ELECTRONIC COMPONENTS INC | unknown | SMALL OUTLINE, R-PDSO-G4 | |||||||||||||
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SD200DE
Philips Semiconductors
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Check for Price | Obsolete | N-CHANNEL | NO | SINGLE WITH BUILT-IN DIODE | 4 | 30 V | ULTRA HIGH FREQUENCY BAND | 1 | LOW NOISE | 0.2 pF | METAL-OXIDE SEMICONDUCTOR | ENHANCEMENT MODE | SILICON | TO-72 | O-MBCY-W4 | Not Qualified | SUBSTRATE | METAL | ROUND | CYLINDRICAL | WIRE | BOTTOM | SIGNETICS CORP | unknown | EAR99 | CYLINDRICAL, O-MBCY-W4 | |||||||||||||||||||
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BF1204
NXP Semiconductors
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Check for Price | Yes | Yes | Obsolete | N-CHANNEL | YES | COMPLEX | 6 | 10 V | ULTRA HIGH FREQUENCY BAND | 2 | 21 dB | 30 mA | LOW NOISE | METAL-OXIDE SEMICONDUCTOR | DUAL GATE, ENHANCEMENT MODE | 200 mW | AMPLIFIER | SILICON | R-PDSO-G6 | e3 | Not Qualified | 150 °C | PLASTIC/EPOXY | RECTANGULAR | SMALL OUTLINE | TIN | GULL WING | DUAL | NXP SEMICONDUCTORS | unknown | EAR99 | SC-88 | MICRO MINIATURE, PLASTIC, SC-88, 6 PIN | 6 |