Parametric results for: RF Small Signal Field-Effect Transistors

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MMBF4416
Fairchild Semiconductor Corporation
$0.1120 Yes Yes Transferred N-CHANNEL YES SINGLE 3 VERY HIGH FREQUENCY BAND 1 18 dB 0.9 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SOT-23 SOT-23, 3 PIN 3 3LD, SOT23, JEDEC TO-236, LOW PROFILE compliant EAR99 8541.21.00.95
MMBF5484
Fairchild Semiconductor Corporation
$0.1086 Yes Yes Transferred N-CHANNEL YES SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 1 pF METAL-OXIDE SEMICONDUCTOR DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SOT-23 SOT-23, 3 PIN 3 3LD, SOT23, JEDEC TO-236, LOW PROFILE compliant EAR99 8541.21.00.95
MMBFJ309
Fairchild Semiconductor Corporation
Check for Price Yes Yes Transferred N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL FAIRCHILD SEMICONDUCTOR CORP SOT-23 SOT-23, 3 PIN 3 3LD, SOT23, JEDEC TO-236, LOW PROFILE compliant EAR99 8541.21.00.95
NTE312
NTE Electronics Inc
$0.8794 Active N-CHANNEL NO SINGLE 3 VERY HIGH FREQUENCY BAND 1 10 dB 1 pF JUNCTION DEPLETION MODE 360 mW AMPLIFIER SILICON TO-92 O-PBCY-W3 Not Qualified PLASTIC/EPOXY ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC CYLINDRICAL, O-PBCY-W3 unknown EAR99 NTE ELECTRONICS
NTE455
NTE Electronics Inc
$1.0677 Active N-CHANNEL YES SINGLE 4 ULTRA HIGH FREQUENCY BAND 1 0.03 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, ENHANCEMENT MODE 200 mW AMPLIFIER SILICON O-CRDB-F4 Not Qualified CERAMIC, METAL-SEALED COFIRED ROUND DISK BUTTON FLAT RADIAL NTE ELECTRONICS INC DISK BUTTON, O-CRDB-F4 unknown EAR99
NTE132
NTE Electronics Inc
$1.7133 Active N-CHANNEL NO SINGLE 3 VERY HIGH FREQUENCY BAND 1 1.2 pF JUNCTION DEPLETION MODE 310 mW AMPLIFIER SILICON TO-106 O-PBCY-W3 Not Qualified PLASTIC/EPOXY ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC unknown EAR99
NTE222
NTE Electronics Inc
$7.8768 Yes Active N-CHANNEL NO SINGLE 4 25 V VERY HIGH FREQUENCY BAND 1 14 dB 50 mA 0.03 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 330 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED SOURCE METAL ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC unknown EAR99 NTE ELECTRONICS
NTE454
NTE Electronics Inc
$8.7444 Yes Active N-CHANNEL NO SINGLE WITH BUILT-IN DIODE 4 ULTRA HIGH FREQUENCY BAND 1 15 dB 60 mA 0.03 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 360 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED SOURCE METAL ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC CYLINDRICAL, O-MBCY-W4 unknown EAR99 NTE ELECTRONICS
NTE221
NTE Electronics Inc
$6.4720 Yes Active N-CHANNEL NO SINGLE 4 20 V VERY HIGH FREQUENCY BAND 1 0.03 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 400 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED SOURCE METAL ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC CYLINDRICAL, O-MBCY-W4 unknown EAR99
NTE452
NTE Electronics Inc
$5.1564 Yes Active N-CHANNEL NO SINGLE 4 30 V VERY HIGH FREQUENCY BAND 1 10 dB 0.8 pF JUNCTION DEPLETION MODE 300 mW AMPLIFIER SILICON TO-72 O-MBCY-W4 Not Qualified NOT SPECIFIED NOT SPECIFIED METAL ROUND CYLINDRICAL WIRE BOTTOM NTE ELECTRONICS INC CYLINDRICAL, O-MBCY-W4 unknown EAR99