Parametric results for: BF245A under RF Small Signal Field-Effect Transistors

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MMBFJ310LT1G
onsemi
$0.0857 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318 compliant EAR99 onsemi
MMBFJ309LT1G
onsemi
$0.0857 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236 R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD HALOGEN FREE AND ROHS COMPLIANT, CASE 318-08, 3 PIN 3 318 compliant EAR99 onsemi
MMBF5484
onsemi
$0.1026 Yes Active N-CHANNEL YES SINGLE 3 1 1 pF JUNCTION DEPLETION MODE 225 mW 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C -55 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL ONSEMI SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P 318 compliant EAR99 onsemi 8541.21.00.95
BF2040E6814HTSA1
Infineon Technologies AG
$0.1595 Yes Obsolete N-CHANNEL YES SINGLE 4 10 V ULTRA HIGH FREQUENCY BAND 1 20 dB 40 mA LOW NOISE METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE AMPLIFIER SILICON R-PDSO-G4 e3 1 NOT SPECIFIED NOT SPECIFIED SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SOT-143, 4 PIN compliant EAR99 Infineon
BF256B
onsemi
$0.1790 Yes Active N-CHANNEL NO SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 350 mW AMPLIFIER SILICON TO-92 O-PBCY-T3 e3 150 °C PLASTIC/EPOXY ROUND CYLINDRICAL MATTE TIN THROUGH-HOLE BOTTOM ONSEMI TO-92-3 135AN compliant EAR99 onsemi
MMBFU310LT1G
onsemi
$0.2002 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 40 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD CASE 318-08, 3 PIN 3 318 compliant EAR99 onsemi
BF998E6327HTSA1
Infineon Technologies AG
$0.2096 Yes Yes Obsolete N-CHANNEL YES SINGLE 4 12 V ULTRA HIGH FREQUENCY BAND 1 30 mA LOW NOISE METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE SILICON R-PDSO-G4 e3 Not Qualified 1 NOT SPECIFIED NOT SPECIFIED SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SOT-143 SMALL OUTLINE, R-PDSO-G4 4 compliant EAR99 Infineon 1996-04-01
MMBFJ310LT3G
onsemi
$0.2315 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 3 318 compliant EAR99 onsemi
SMMBFJ310LT1G
onsemi
$0.2617 Yes Active N-CHANNEL YES JUNCTION 225 mW e3 1 150 °C 260 30 Matte Tin (Sn) - annealed ONSEMI SOT-23 (TO-236) 3 LEAD 3 318 compliant EAR99 onsemi
ATF-38143-BLKG
Broadcom Limited
$0.4478 Yes Obsolete N-CHANNEL YES SINGLE 4 4.5 V X BAND 1 15 dB HIGH ELECTRON MOBILITY DEPLETION MODE 580 mW AMPLIFIER GALLIUM ARSENIDE R-PDSO-G4 e3 Not Qualified 1 160 °C 260 20 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE MATTE TIN GULL WING DUAL BROADCOM LTD SMALL OUTLINE, R-PDSO-G4 compliant EAR99 8541.21.00.75