Parametric results for: S8850 under RF Small Signal Field-Effect Transistors

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MMBFJ310LT3G
onsemi
$0.2240 Yes Active N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI SOT-23 (TO-236) 3 LEAD 3 318-08 compliant EAR99 onsemi
MMBFJ211
onsemi
$0.2323 Yes Active N-CHANNEL YES SINGLE 3 VERY HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 225 mW AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Matte Tin (Sn) - annealed GULL WING DUAL ONSEMI 318-08 compliant EAR99 onsemi
2N5486G
onsemi
$0.2328 Yes Obsolete N-CHANNEL NO SINGLE 3 ULTRA HIGH FREQUENCY BAND 1 10 dB 30 mA 1 pF JUNCTION DEPLETION MODE 310 mW AMPLIFIER SILICON TO-92 O-PBCY-T3 e1 Not Qualified 150 °C 260 PLASTIC/EPOXY ROUND CYLINDRICAL TIN SILVER COPPER THROUGH-HOLE BOTTOM ONSEMI TO-92 (TO-226) 5.33mm Body Height 3 29-11 unknown EAR99 onsemi LEAD FREE, CASE 29-11, TO-226AA, 3 PIN
SMMBFJ310LT1G
onsemi
$0.2336 Yes Active N-CHANNEL YES JUNCTION 225 mW e3 1 150 °C 260 30 Matte Tin (Sn) - annealed ONSEMI SOT-23 (TO-236) 3 LEAD 3 318-08 compliant EAR99 onsemi
BF998E6327HTSA1
Infineon Technologies AG
$0.2343 Yes Yes Obsolete N-CHANNEL YES SINGLE 4 12 V ULTRA HIGH FREQUENCY BAND 1 30 mA LOW NOISE METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE SILICON R-PDSO-G4 e3 Not Qualified 1 NOT SPECIFIED NOT SPECIFIED SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL INFINEON TECHNOLOGIES AG SOT-143 4 compliant EAR99 Infineon SMALL OUTLINE, R-PDSO-G4 1996-04-01
BF1105R,215
NXP Semiconductors
$0.2426 Yes Obsolete N-CHANNEL YES SINGLE 4 7 V ULTRA HIGH FREQUENCY BAND 1 30 mA 0.04 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, ENHANCEMENT MODE AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 1 150 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL NXP SEMICONDUCTORS SOT-143 4 SOT143R compliant EAR99 NXP PLASTIC PACKAGE-4 1997-09-02 8541.21.00
BF545C,215
NXP Semiconductors
$0.2429 Yes Obsolete N-CHANNEL YES SINGLE 3 30 V VERY HIGH FREQUENCY BAND 1 JUNCTION DEPLETION MODE 250 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS TO-236 3 SOT23 compliant EAR99 PLASTIC PACKAGE-3 8541.21.00.75
MMBFJ309
onsemi
$0.2448 Yes Obsolete N-CHANNEL YES SINGLE 3 25 V ULTRA HIGH FREQUENCY BAND 1 2.5 pF JUNCTION DEPLETION MODE AMPLIFIER SILICON R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE Tin (Sn) GULL WING DUAL ONSEMI 318 compliant EAR99 onsemi SOT-23, 3 PIN
BF908WR,115
NXP Semiconductors
$0.2505 Yes Obsolete N-CHANNEL YES SINGLE WITH BUILT-IN DIODE 4 12 V ULTRA HIGH FREQUENCY BAND 1 40 mA LOW NOISE 0.045 pF METAL-OXIDE SEMICONDUCTOR DUAL GATE, DEPLETION MODE 300 mW AMPLIFIER SILICON R-PDSO-G4 e3 Not Qualified 150 °C 260 30 SOURCE PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS 4 SOT343R compliant EAR99 NXP MICRO MINIATURE, PLASTIC, SMD, CMPAK-4 8541.21.00.75
PMBFJ309,215
NXP Semiconductors
$0.2621 Yes Obsolete N-CHANNEL YES SINGLE 3 25 V VERY HIGH FREQUENCY BAND 1 LOW NOISE 2.5 pF JUNCTION DEPLETION MODE 250 mW AMPLIFIER SILICON TO-236AB R-PDSO-G3 e3 Not Qualified 1 150 °C 260 30 PLASTIC/EPOXY RECTANGULAR SMALL OUTLINE TIN GULL WING DUAL NXP SEMICONDUCTORS TO-236 3 SOT23 compliant EAR99 NXP PLASTIC PACKAGE-3 1993-07-01 8541.21.00